Infineon Technologies BSS138WH6327XTSA1

Name: BSS138WH6327XTSA1
Brand: Infineon Technologies
SKU: 2479150-BSS138WH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138WH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2479150-BSS138WH6327XTSA1

Description:: MOSFET N-CH 60V 280MA SOT-323

ECAD Model:

Datasheet:: BSS138WH6327XTSA1

Specifications

Infineon Technologies BSS138WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS138WH6327XTSA1.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
124.596154mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SIPMOS®
Published
2002
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
2.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 26μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
43pF @ 25V
Current - Continuous Drain (Id) @ 25°C
280mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8.2 ns
Turn-Off Delay Time
6.7 ns
Continuous Drain Current (ID)
280mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain to Source Breakdown Voltage
60V
Feedback Cap-Max (Crss)
4.2 pF
Height
1mm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS138WH6327XTSA1 Description BSS138WH6327XTSA1 N-Channel MOSFET application are power startup power, over-voltage protection, inrush-current limiter, and Off-line Voltage Reference. With just one component one can build a basic current regulator. BSS138WH6327XTSA1 Infineon Technologies are suitable for automotive use. To meet certain needs, BSS138WH6327XTSA1 MOSFETs with depletion are available with an indicator at the end of the reel. BSS138WH6327XTSA1 Features Enhancement mode Pb-free lead plating RoHS compliant Qualified according to AEC Q101 BSS138WH6327XTSA1 Applications Automotive Consumer DC-DC eMobility Onboard charger Telecom

BSS138WH6327XTSA1 More Descriptions

Single N-Channel 60 V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-323
Mosfet, N-Ch, 60V, 0.28A, Sot-323; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:280Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSS138WH6327XTSA1
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

Product Comparison

The three parts on the right have similar specifications to BSS138WH6327XTSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Additional Feature

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Configuration

Transistor Application

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

View Compare
BSS138WH6327XTSA1

Infineon Technologies

10 Weeks

Tin

Surface Mount

Surface Mount

SC-70, SOT-323

3

124.596154mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

SIPMOS®

2002

e3

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

1

1

50V

500mW Ta

Single

2A

ENHANCEMENT MODE

500mW

2.2 ns

N-Channel

3.5 Ω @ 200mA, 10V

1.4V @ 26μA

Halogen Free

43pF @ 25V

280mA Ta

1.5nC @ 10V

3ns

4.5V 10V

±20V

8.2 ns

6.7 ns

280mA

1V

20V

60V

60V

4.2 pF

1mm

2mm

1.25mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

1

-

-

360mW Ta

-

-

ENHANCEMENT MODE

-

-

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

-

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

6 pF

-

-

-

-

Non-RoHS Compliant

-

YES

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

SWITCHING

100V

0.17A

10Ohm

100V

-

-

-

-

BSS138WH6327XTSA1 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

-

Surface Mount

SC-70, SOT-323

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

1

-

-

500mW Ta

-

-

ENHANCEMENT MODE

-

-

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

-

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

4.2 pF

-

-

-

-

RoHS Compliant

-

YES

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

60V

0.28A

-

60V

260

compliant

40

3

BSS138WH6327XTSA1 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

360mW Ta

-

-

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

-

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

-

-

-

BSS138WH6327XTSA1 vs BSS119 E7978