Fairchild/ON Semiconductor BSS138W

Name: BSS138W
Brand: Fairchild/ON Semiconductor
SKU: 2478925-BSS138W
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138W

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478925-BSS138W

Description:: MOSFET N-CH 50V 0.21A SOT323

ECAD Model:

Datasheet:: BSS138W

Part Pictures

Specifications

Fairchild/ON Semiconductor BSS138W technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BSS138W.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Supplier Device Package
SC-70 (SOT323)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3.5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Base Part Number
BSS138
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
340mW Ta
Element Configuration
Single
Current
2A
Power Dissipation
340mW
Turn On Delay Time
2.3 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
38pF @ 25V
Current - Continuous Drain (Id) @ 25°C
210mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.1nC @ 10V
Rise Time
1.9ns
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.5 ns
Turn-Off Delay Time
6.7 ns
Continuous Drain Current (ID)
210mA
Threshold Voltage
1.3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
Input Capacitance
38pF
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
1.17Ohm
Rds On Max
3.5 Ω
Height
1.1mm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS138W Description

The BSS138W is an enhancement mode N-Channel MOSFET. The BSS138W MOSFET has been designed to provide durable, dependable, and rapid switching performance while minimizing on-state resistance. The ONSEMI BSS138W is ideal for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching tasks.

BSS138W Features

Low input capacitance
Fast switching speed
Moisture sensitivity level 1 as per J-STD-020
UL94V-0 Flammability rating
Low ON-resistance
Low gate threshold voltage
Halogen-free, Green device
Qualified to AEC-Q101 standards for high reliability

BSS138W Applications

Aerospace
Defence
Military
Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom
Power Management
Automotive

BSS138W More Descriptions

N-Channel MOSFET, Logic Level Enhancement Mode, 50V , 210mA, 3.5Ω
N-Channel 50 V 3.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-323
Transistor, MOSFET, N-channel, 50V, 210MA, logic level, fast switching, SOT323 | ON Semiconductor BSS138W
MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Source Voltage Vds:50V; On Resistance
This N-Channel enhancement mode field effect transistor. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS138W is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 210 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 340

Product Comparison

The three parts on the right have similar specifications to BSS138W.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Base Part Number

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

View Compare
BSS138W

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Tin

Surface Mount

Surface Mount

SC-70, SOT-323

3

SC-70 (SOT323)

-55°C~150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

3.5Ohm

150°C

-55°C

MOSFET (Metal Oxide)

BSS138

1

1

50V

340mW Ta

Single

2A

340mW

2.3 ns

N-Channel

3.5Ohm @ 220mA, 10V

1.5V @ 1mA

38pF @ 25V

210mA Ta

1.1nC @ 10V

1.9ns

50V

4.5V 10V

±20V

6.5 ns

6.7 ns

210mA

1.3V

20V

50V

38pF

150°C

1.17Ohm

3.5 Ω

1.1mm

2mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SIPMOS®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS138W vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

360mW Ta

-

-

-

-

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

100V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

SIPMOS®

YES

SILICON

e0

3

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

DUAL

GULL WING

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

0.17A

10Ohm

100V

6 pF

-

-

-

-

BSS138W vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

-

-

Surface Mount

SC-70, SOT-323

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

500mW Ta

-

-

-

-

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

SIPMOS®

YES

SILICON

e3

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

DUAL

GULL WING

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

0.28A

-

60V

4.2 pF

260

compliant

40

3

BSS138W vs BSS138W L6433