Diodes Incorporated BSS138TA

Name: BSS138TA
Brand: Diodes Incorporated
SKU: 2477992-BSS138TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2477992-BSS138TA

Description:: MOSFET N-CH 50V 200MA SOT23-3

ECAD Model:

Datasheet:: BSS138TA

Part Pictures

Specifications

Diodes Incorporated BSS138TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138TA.

Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.5Ohm
Subcategory
FET General Purpose Power
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.2A
Drain to Source Breakdown Voltage
50V
Nominal Vgs
1.5 V
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS138TA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

BSS138TA Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.5V

BSS138TA Applications
There are a lot of Diodes Incorporated
BSS138TA applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

BSS138TA More Descriptions

Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
N-Channel 50 V 3.5 Ohm Enhancement Mode FET-SOT-23 -use Diodes BSS138-7-F
Mosfet, N Channel, 50V, 200Ma, Sot-23; Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:200Ma; On Resistance Rds(On):3.5Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: Yes
MOSFET, N, 50V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: 1(G), 2(S),3(D); Pulse Current Idm: 800mA; Termination Type: Surface Mount Device; Voltage Vds Typ: 50V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V; Voltage Vgs th Min: 500mV

Product Comparison

The three parts on the right have similar specifications to BSS138TA.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Series

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Finish

Additional Feature

HTS Code

JESD-30 Code

Configuration

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
BSS138TA

Diodes Incorporated

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2008

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

3.5Ohm

FET General Purpose Power

50V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

200mA

40

3

Not Qualified

1

1

300mW Ta

Single

ENHANCEMENT MODE

360mW

20 ns

N-Channel

SWITCHING

3.5 Ω @ 220mA, 10V

1.5V @ 250μA

50pF @ 10V

200mA Ta

10ns

10V

±20V

10 ns

20 ns

200mA

1.5V

20V

0.2A

50V

1.5 V

8 pF

1mm

2.9mm

1.3mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SIPMOS®

1.4nC @ 10V

60V

-

-

-

-

-

-

-

-

BSS138TA vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

-

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

Not Qualified

1

-

360mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

0.17A

-

-

6 pF

-

-

-

-

Non-RoHS Compliant

-

SIPMOS®

2.67nC @ 10V

100V

YES

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

10Ohm

100V

BSS138TA vs BSS123 E6433
BSS119 E7978

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIPMOS®

2.5nC @ 10V

100V

-

-

-

-

-

-

-

-

BSS138TA vs BSS119 E7978