Nexperia USA Inc. BSS138PW,115

Name: BSS138PW,115
Brand: Nexperia USA Inc.
SKU: 2478894-BSS138PW,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138PW,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478894-BSS138PW,115

Description:: MOSFET N-CH 60V 320MA SOT323

ECAD Model:

Datasheet:: BSS138PW,115

Specifications

Nexperia USA Inc. BSS138PW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS138PW,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
260mW Ta 830mW Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
320mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

BSS138PW,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BSS138PW,115 Features
a 60V drain to source voltage (Vdss)

BSS138PW,115 Applications
There are a lot of Nexperia USA Inc.
BSS138PW,115 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BSS138PW,115 More Descriptions

Transistor MOSFET N-CH 60V 0.32A Automotive 3-Pin SC-70 T/R
N CH MOSFET, TRENCH, 60V, 320MA, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:0.32A; Drain Source Voltage Vds:60V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.2V ;RoHS Compliant: Yes
MOSFET, N CH, 60V, 0.32A, SOT323; Transistor Polarity: N Channel; Continuous Drain Current Id: 320mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 320 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 9 / Turn-ON Delay Time ns = 2 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 260

Product Comparison

The three parts on the right have similar specifications to BSS138PW,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

DS Breakdown Voltage-Min

RoHS Status

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

Reach Compliance Code

View Compare
BSS138PW,115

Nexperia USA Inc.

4 Weeks

Surface Mount

SC-70, SOT-323

YES

3

SILICON

-55°C~150°C TA

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

SINGLE WITH BUILT-IN DIODE

260mW Ta 830mW Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.6 Ω @ 300mA, 10V

1.5V @ 250μA

50pF @ 10V

320mA Ta

0.8nC @ 4.5V

60V

10V

±20V

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

100V

Non-RoHS Compliant

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

0.17A

10Ohm

6 pF

-

BSS138PW,115 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

60V

4.5V 10V

±20V

60V

RoHS Compliant

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

0.28A

-

4.2 pF

compliant

BSS138PW,115 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

360mW Ta

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

100V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

BSS138PW,115 vs BSS119 E7978