Infineon Technologies BSS138NH6327XTSA2

Name: BSS138NH6327XTSA2
Brand: Infineon Technologies
SKU: 2479167-BSS138NH6327XTSA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138NH6327XTSA2

Manufacturer:: Infineon Technologies

Ventron No:: 2479167-BSS138NH6327XTSA2

Description:: MOSFET N-CH 60V 230MA SOT-23

ECAD Model:

Datasheet:: BSS138NH6327XTSA2

Specifications

Infineon Technologies BSS138NH6327XTSA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS138NH6327XTSA2.

Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Voltage
50V
Power Dissipation-Max
360mW Ta
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
2.3 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 26μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
41pF @ 25V
Current - Continuous Drain (Id) @ 25°C
230mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8.2 ns
Turn-Off Delay Time
6.7 ns
Continuous Drain Current (ID)
230mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Dual Supply Voltage
60V
Recovery Time
14.5 ns
Nominal Vgs
1 V
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS138NH6327XTSA2 Description
The BSS138NH6327XTSA2 from Infineon Technologies is a 60V, 0.23A, N-channel SIPMOS? tiny signal transistor in a 3 pin SOT-23 packaging.

BSS138NH6327XTSA2 Features
N-channel
Enhancement mode
Logic level
dv /dt rated
Pb-free lead-plating; RoHS compliant
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21

BSS138NH6327XTSA2 Applications
On/off switches for general use
Bias supply circuits
LED diode driver Infrared diode amplifier
Relay driver

BSS138NH6327XTSA2 More Descriptions

INFINEON SMD Autom. MOSFET NFET 60V 230mA 3,5Ω 150°C SOT-23 BSS138N
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
BSS138N H6327 Infineon Trans MOSFET N-CH 60V 0.23A3-Pin SOT-23 T/R RoHS
Single N-Channel 60 V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23
60V 230mA 3.5´Î@10V230mA 360mW 1.4V@26Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Transistor NPN Mos BSS138/BSS138N INFINEON RoHS milliampere=220 V=50 SOt23Halfin
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:230Ma; On Resistance Rds(On):2.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:- Rohs Compliant: Yes
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 230 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 8.2 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 6.7 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

Product Comparison

The three parts on the right have similar specifications to BSS138NH6327XTSA2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Voltage

Power Dissipation-Max

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Surface Mount

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
BSS138NH6327XTSA2

Infineon Technologies

10 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

50V

360mW Ta

2A

ENHANCEMENT MODE

360mW

2.3 ns

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 26μA

Halogen Free

41pF @ 25V

230mA Ta

1.4nC @ 10V

3ns

4.5V 10V

±20V

8.2 ns

6.7 ns

230mA

1V

20V

60V

60V

14.5 ns

1 V

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

-

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

60V

-

-

-

-

-

-

-

-

-

-

BSS138NH6327XTSA2 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

-

Obsolete

1 (Unlimited)

3

-

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

-

360mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

-

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

100V

YES

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SWITCHING

0.17A

10Ohm

100V

6 pF

BSS138NH6327XTSA2 vs BSS123 E6433
BSS119 E7978

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

-

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

-

-

-

-

-

-

BSS138NH6327XTSA2 vs BSS119 E7978