BSS123WQ-7-F

Diodes Incorporated BSS123WQ-7-F

Part Number:
BSS123WQ-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2480931-BSS123WQ-7-F
Description:
MOSFET N-CH 100V 0.17A SOT323
ECAD Model:
Datasheet:
BSS123WQ-7-F

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Specifications
Diodes Incorporated BSS123WQ-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123WQ-7-F.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Configuration
    Single
  • Power Dissipation-Max
    200mW Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    6 Ω @ 170mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    170mA Ta
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    170mA
  • Drain Current-Max (Abs) (ID)
    0.17A
  • RoHS Status
    ROHS3 Compliant
Description
BSS123WQ-7-F Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.17A.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BSS123WQ-7-F Features
a continuous drain current (ID) of 170mA
a 100V drain to source voltage (Vdss)


BSS123WQ-7-F Applications
There are a lot of Diodes Incorporated
BSS123WQ-7-F applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BSS123WQ-7-F More Descriptions
Transistor MOSFET N-CH 100V 170mA 3-Pin SOT-323 T/RAvnet Japan
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 100V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to BSS123WQ-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    RoHS Status
    Series
    Gate Charge (Qg) (Max) @ Vgs
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Operating Mode
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    View Compare
  • BSS123WQ-7-F
    BSS123WQ-7-F
    16 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    260
    30
    Single
    200mW Ta
    N-Channel
    6 Ω @ 170mA, 10V
    2V @ 1mA
    60pF @ 25V
    170mA Ta
    100V
    4.5V 10V
    ±20V
    170mA
    0.17A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS138N E8004
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    360mW Ta
    N-Channel
    3.5 Ω @ 230mA, 10V
    1.4V @ 250μA
    41pF @ 25V
    230mA Ta
    60V
    4.5V 10V
    ±20V
    -
    -
    ROHS3 Compliant
    SIPMOS®
    1.4nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS138W L6433
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    40
    SINGLE WITH BUILT-IN DIODE
    500mW Ta
    N-Channel
    3.5 Ω @ 220mA, 10V
    1.4V @ 26μA
    43pF @ 25V
    280mA Ta
    60V
    4.5V 10V
    ±20V
    -
    0.28A
    RoHS Compliant
    SIPMOS®
    1.5nC @ 10V
    YES
    SILICON
    3
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    DUAL
    GULL WING
    compliant
    3
    R-PDSO-G3
    Not Qualified
    1
    ENHANCEMENT MODE
    60V
    4.2 pF
  • BSS119 E7978
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    360mW Ta
    N-Channel
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    78pF @ 25V
    170mA Ta
    100V
    4.5V 10V
    ±20V
    -
    -
    -
    SIPMOS®
    2.5nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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