Diodes Incorporated BSS123WQ-7-F
- Part Number:
- BSS123WQ-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480931-BSS123WQ-7-F
- Description:
- MOSFET N-CH 100V 0.17A SOT323
- Datasheet:
- BSS123WQ-7-F
Diodes Incorporated BSS123WQ-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123WQ-7-F.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- ConfigurationSingle
- Power Dissipation-Max200mW Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6 Ω @ 170mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170mA Ta
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)170mA
- Drain Current-Max (Abs) (ID)0.17A
- RoHS StatusROHS3 Compliant
BSS123WQ-7-F Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.17A.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
BSS123WQ-7-F Features
a continuous drain current (ID) of 170mA
a 100V drain to source voltage (Vdss)
BSS123WQ-7-F Applications
There are a lot of Diodes Incorporated
BSS123WQ-7-F applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.17A.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
BSS123WQ-7-F Features
a continuous drain current (ID) of 170mA
a 100V drain to source voltage (Vdss)
BSS123WQ-7-F Applications
There are a lot of Diodes Incorporated
BSS123WQ-7-F applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BSS123WQ-7-F More Descriptions
Transistor MOSFET N-CH 100V 170mA 3-Pin SOT-323 T/RAvnet Japan
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 100V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 100V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to BSS123WQ-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)RoHS StatusSeriesGate Charge (Qg) (Max) @ VgsSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureHTS CodeTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsOperating ModeDS Breakdown Voltage-MinFeedback Cap-Max (Crss)View Compare
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BSS123WQ-7-F16 WeeksSurface MountSurface MountSC-70, SOT-3233-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)EAR99Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)26030Single200mW TaN-Channel6 Ω @ 170mA, 10V2V @ 1mA60pF @ 25V170mA Ta100V4.5V 10V±20V170mA0.17AROHS3 Compliant------------------
-
--Surface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)2012-Discontinued1 (Unlimited)---MOSFET (Metal Oxide)---360mW TaN-Channel3.5 Ω @ 230mA, 10V1.4V @ 250μA41pF @ 25V230mA Ta60V4.5V 10V±20V--ROHS3 CompliantSIPMOS®1.4nC @ 10V---------------
-
--Surface MountSC-70, SOT-323--55°C~150°C TJTape & Reel (TR)2007e3Obsolete1 (Unlimited)EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)26040SINGLE WITH BUILT-IN DIODE500mW TaN-Channel3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta60V4.5V 10V±20V-0.28ARoHS CompliantSIPMOS®1.5nC @ 10VYESSILICON3LOGIC LEVEL COMPATIBLE8541.21.00.95DUALGULL WINGcompliant3R-PDSO-G3Not Qualified1ENHANCEMENT MODE60V4.2 pF
-
--Surface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)2002-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---360mW TaN-Channel6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta100V4.5V 10V±20V---SIPMOS®2.5nC @ 10V---------------
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