Diodes Incorporated BSS123W-7
- Part Number:
- BSS123W-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488808-BSS123W-7
- Description:
- MOSFET N-CH 100V 170MA SC70-3
- Datasheet:
- BSS123W-7
Diodes Incorporated BSS123W-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123W-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating170mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 170mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)170mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Feedback Cap-Max (Crss)6 pF
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSS123W-7 Overview
A device's maximal input capacitance is 60pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BSS123W-7 Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
BSS123W-7 Applications
There are a lot of Diodes Incorporated
BSS123W-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 60pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BSS123W-7 Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
BSS123W-7 Applications
There are a lot of Diodes Incorporated
BSS123W-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
BSS123W-7 More Descriptions
Transistor - FET N-Channel 100V 200mW
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 100V 170MA SC70-3
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 100V 170MA SC70-3
The three parts on the right have similar specifications to BSS123W-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountSeriesTerminal FinishAdditional FeatureHTS CodeJESD-30 CodeConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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BSS123W-7Surface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e0noDiscontinued1 (Unlimited)3EAR99FET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING235not_compliant170mA103Not Qualified11200mW TaSingleENHANCEMENT MODE300mW8 nsN-ChannelSWITCHING6 Ω @ 170mA, 10V2V @ 1mA60pF @ 25V170mA Ta8ns4.5V 10V±20V8 ns13 ns170mA20V100V6 pF1mm2.2mm1.35mmNo SVHCNon-RoHS CompliantContains Lead-------------
-
-Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING-----Not Qualified1-360mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta-4.5V 10V±20V-----6 pF----Non-RoHS Compliant-YESSIPMOS®Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE2.67nC @ 10V100V0.17A10Ohm100V
-
-Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260compliant-403Not Qualified1-500mW Ta-ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta-4.5V 10V±20V-----4.2 pF----RoHS Compliant-YESSIPMOS®MATTE TINLOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE1.5nC @ 10V60V0.28A-60V
-
-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----------360mW Ta----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta-4.5V 10V±20V-------------SIPMOS®-----2.5nC @ 10V100V---
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