Diodes Incorporated BSS123ATC

Name: BSS123ATC
Brand: Diodes Incorporated
SKU: 2488740-BSS123ATC
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS123ATC

Manufacturer:: Diodes Incorporated

Ventron No:: 2488740-BSS123ATC

Description:: MOSFET N-CH 100V 170MA SOT23-3

ECAD Model:

Datasheet:: BSS123A Datasheet

Specifications

Diodes Incorporated BSS123ATC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123ATC.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
170mA
Time@Peak Reflow Temperature-Max (s)
10
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
360mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
170mA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
5Ohm
Drain to Source Breakdown Voltage
100V
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BSS123ATC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 25pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 170mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

BSS123ATC Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns

BSS123ATC Applications
There are a lot of Diodes Incorporated
BSS123ATC applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

BSS123ATC More Descriptions

MOSFET N-CH 100V 170MA SOT23-3
Compliant Surface Mount 1.3 mm 1 mm 2.9 mm 7.994566 mg 10 ns Lead Free
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to BSS123ATC.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Series

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Surface Mount

Additional Feature

HTS Code

Subcategory

Pin Count

Configuration

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
BSS123ATC

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

unknown

170mA

10

R-PDSO-G3

Not Qualified

1

1

360mW Ta

Single

ENHANCEMENT MODE

360mW

10 ns

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

2V @ 1mA

25pF @ 25V

170mA Ta

10ns

4.5V 10V

±20V

10 ns

15 ns

170mA

20V

5Ohm

100V

1mm

2.9mm

1.3mm

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

-

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SIPMOS®

1.4nC @ 10V

60V

-

-

-

-

-

-

-

-

-

BSS123ATC vs BSS138N E8004
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

compliant

-

40

R-PDSO-G3

Not Qualified

1

-

500mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

SIPMOS®

1.5nC @ 10V

60V

YES

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

3

SINGLE WITH BUILT-IN DIODE

0.28A

60V

4.2 pF

BSS123ATC vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

SIPMOS®

2.5nC @ 10V

100V

-

-

-

-

-

-

-

-

-

BSS123ATC vs BSS119 E7978