Diodes Incorporated BSS123-7
- Part Number:
- BSS123-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488807-BSS123-7
- Description:
- MOSFET N-CH 100V 170MA SOT23-3
- Datasheet:
- BSS123-7
Diodes Incorporated BSS123-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight8.193012mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating170mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 170mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)170mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Feedback Cap-Max (Crss)6 pF
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSS123-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
BSS123-7 Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
BSS123-7 Applications
There are a lot of Diodes Incorporated
BSS123-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
BSS123-7 Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
BSS123-7 Applications
There are a lot of Diodes Incorporated
BSS123-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BSS123-7 More Descriptions
MOSFET N-CH 100V 170MA SOT23-3
Transistor - FET N-Channel 100V 360mW
Transistor - FET N-Channel 100V 360mW
The three parts on the right have similar specifications to BSS123-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountSeriesTerminal FinishAdditional FeatureHTS CodeJESD-30 CodeConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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BSS123-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-338.193012mgSILICON-55°C~150°C TJTape & Reel (TR)2008e0Discontinued1 (Unlimited)3EAR99FET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING235not_compliant170mA103Not Qualified11300mW TaSingleENHANCEMENT MODE300mW8 nsN-ChannelSWITCHING6 Ω @ 170mA, 10V2V @ 1mA60pF @ 25V170mA Ta8ns10V±20V8 ns13 ns170mA20V100V6 pF1mm2.9mm1.3mmNo SVHCNon-RoHS CompliantContains Lead-------------
-
-Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0Obsolete1 (Unlimited)3EAR99FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING-----Not Qualified1-360mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta-4.5V 10V±20V-----6 pF----Non-RoHS Compliant-YESSIPMOS®Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE2.67nC @ 10V100V0.17A10Ohm100V
-
-Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2007e3Obsolete1 (Unlimited)3EAR99FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260compliant-403Not Qualified1-500mW Ta-ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta-4.5V 10V±20V-----4.2 pF----RoHS Compliant-YESSIPMOS®MATTE TINLOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE1.5nC @ 10V60V0.28A-60V
-
-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----------360mW Ta----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta-4.5V 10V±20V-------------SIPMOS®-----2.5nC @ 10V100V---
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