BSS123-7

Diodes Incorporated BSS123-7

Part Number:
BSS123-7
Manufacturer:
Diodes Incorporated
Ventron No:
2488807-BSS123-7
Description:
MOSFET N-CH 100V 170MA SOT23-3
ECAD Model:
Datasheet:
BSS123-7

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Comments
Specifications
Diodes Incorporated BSS123-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    8.193012mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e0
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    235
  • Reach Compliance Code
    not_compliant
  • Current Rating
    170mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    300mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6 Ω @ 170mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    170mA Ta
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    170mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Feedback Cap-Max (Crss)
    6 pF
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSS123-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

BSS123-7 Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns


BSS123-7 Applications
There are a lot of Diodes Incorporated
BSS123-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BSS123-7 More Descriptions
MOSFET N-CH 100V 170MA SOT23-3
Transistor - FET N-Channel 100V 360mW
Product Comparison
The three parts on the right have similar specifications to BSS123-7.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Series
    Terminal Finish
    Additional Feature
    HTS Code
    JESD-30 Code
    Configuration
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • BSS123-7
    BSS123-7
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    8.193012mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e0
    Discontinued
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    235
    not_compliant
    170mA
    10
    3
    Not Qualified
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    300mW
    8 ns
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    2V @ 1mA
    60pF @ 25V
    170mA Ta
    8ns
    10V
    ±20V
    8 ns
    13 ns
    170mA
    20V
    100V
    6 pF
    1mm
    2.9mm
    1.3mm
    No SVHC
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS123 E6433
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    Not Qualified
    1
    -
    360mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    1.8V @ 50μA
    69pF @ 25V
    170mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    6 pF
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SIPMOS®
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    2.67nC @ 10V
    100V
    0.17A
    10Ohm
    100V
  • BSS138W L6433
    -
    Surface Mount
    SC-70, SOT-323
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    compliant
    -
    40
    3
    Not Qualified
    1
    -
    500mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    3.5 Ω @ 220mA, 10V
    1.4V @ 26μA
    43pF @ 25V
    280mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    4.2 pF
    -
    -
    -
    -
    RoHS Compliant
    -
    YES
    SIPMOS®
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    1.5nC @ 10V
    60V
    0.28A
    -
    60V
  • BSS119 E7978
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    -
    N-Channel
    -
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    78pF @ 25V
    170mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SIPMOS®
    -
    -
    -
    -
    -
    2.5nC @ 10V
    100V
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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