BSP296E6327

Infineon Technologies BSP296E6327

Part Number:
BSP296E6327
Manufacturer:
Infineon Technologies
Ventron No:
3071490-BSP296E6327
Description:
MOSFET N-CH 100V 1.1A SOT223
ECAD Model:
Datasheet:
BSP296

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Specifications
Infineon Technologies BSP296E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP296E6327.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SIPMOS®
  • Published
    2001
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.79W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.79W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    700m Ω @ 1.1A, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 400μA
  • Input Capacitance (Ciss) (Max) @ Vds
    364pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    17.2nC @ 10V
  • Rise Time
    7.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21.4 ns
  • Turn-Off Delay Time
    37.4 ns
  • Continuous Drain Current (ID)
    1.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    4A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSP296E6327 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 364pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [1A] according to its drain current.It is [37.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSP296E6327 Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37.4 ns
based on its rated peak drain current 4A.


BSP296E6327 Applications
There are a lot of Infineon Technologies
BSP296E6327 applications of single MOSFETs transistors.


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Industrial Power Supplies
BSP296E6327 More Descriptions
Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
MOSFET N-CH 100V 1.1A SOT223
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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