Infineon Technologies BSP296E6327
- Part Number:
- BSP296E6327
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071490-BSP296E6327
- Description:
- MOSFET N-CH 100V 1.1A SOT223
- Datasheet:
- BSP296
Infineon Technologies BSP296E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP296E6327.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSIPMOS®
- Published2001
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.79W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.79W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs700m Ω @ 1.1A, 10V
- Vgs(th) (Max) @ Id1.8V @ 400μA
- Input Capacitance (Ciss) (Max) @ Vds364pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.1A Ta
- Gate Charge (Qg) (Max) @ Vgs17.2nC @ 10V
- Rise Time7.9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)21.4 ns
- Turn-Off Delay Time37.4 ns
- Continuous Drain Current (ID)1.1A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)1A
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)4A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSP296E6327 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 364pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [1A] according to its drain current.It is [37.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
BSP296E6327 Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37.4 ns
based on its rated peak drain current 4A.
BSP296E6327 Applications
There are a lot of Infineon Technologies
BSP296E6327 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 364pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [1A] according to its drain current.It is [37.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
BSP296E6327 Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37.4 ns
based on its rated peak drain current 4A.
BSP296E6327 Applications
There are a lot of Infineon Technologies
BSP296E6327 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSP296E6327 More Descriptions
Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
MOSFET N-CH 100V 1.1A SOT223
OEMs, CMs ONLY (NO BROKERS)
French Electronic Distributor since 1988
MOSFET N-CH 100V 1.1A SOT223
OEMs, CMs ONLY (NO BROKERS)
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