BSH203,215

Nexperia USA Inc. BSH203,215

Part Number:
BSH203,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
3554143-BSH203,215
Description:
MOSFET P-CH 30V 470MA SOT23
ECAD Model:
Datasheet:
BSH203,215

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Specifications
Nexperia USA Inc. BSH203,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH203,215.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    900mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    417mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    417mW
  • Turn On Delay Time
    2 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 280mA, 4.5V
  • Vgs(th) (Max) @ Id
    680mV @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 24V
  • Current - Continuous Drain (Id) @ 25°C
    470mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.2nC @ 4.5V
  • Rise Time
    4.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    4.5 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    -470mA
  • Threshold Voltage
    -680mV
  • Gate to Source Voltage (Vgs)
    8V
  • Max Dual Supply Voltage
    -30V
  • Drain Current-Max (Abs) (ID)
    0.47A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    -30V
  • Nominal Vgs
    -680 mV
  • Height
    1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSH203,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 24V.This device has a continuous drain current (ID) of [-470mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 0.47A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -30V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -680mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

BSH203,215 Features
a continuous drain current (ID) of -470mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
a threshold voltage of -680mV


BSH203,215 Applications
There are a lot of Nexperia USA Inc.
BSH203,215 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSH203,215 More Descriptions
BSH203 Sereies 30 V 1.65 Ohm 2.2 nC 417 mW P-Channel Silicon SMT MOSFET - SOT-23
30V 470mA 900m¦¸@4.5V,280mA 417mW 680mV@1mA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET P-CH 30V 470MA SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -280mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.66ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -680mV; Power Dissipation Pd: 417mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -470mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -30V; Voltage Vgs Max: -680mV; Voltage Vgs Rds on Measurement: -4.5V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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