Nexperia USA Inc. BSH203,215
- Part Number:
- BSH203,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3554143-BSH203,215
- Description:
- MOSFET P-CH 30V 470MA SOT23
- Datasheet:
- BSH203,215
Nexperia USA Inc. BSH203,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH203,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance900mOhm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Power Dissipation-Max417mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation417mW
- Turn On Delay Time2 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs900m Ω @ 280mA, 4.5V
- Vgs(th) (Max) @ Id680mV @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds110pF @ 24V
- Current - Continuous Drain (Id) @ 25°C470mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
- Rise Time4.5ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)4.5 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)-470mA
- Threshold Voltage-680mV
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage-30V
- Drain Current-Max (Abs) (ID)0.47A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage-30V
- Nominal Vgs-680 mV
- Height1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSH203,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 24V.This device has a continuous drain current (ID) of [-470mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 0.47A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -30V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -680mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
BSH203,215 Features
a continuous drain current (ID) of -470mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
a threshold voltage of -680mV
BSH203,215 Applications
There are a lot of Nexperia USA Inc.
BSH203,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 24V.This device has a continuous drain current (ID) of [-470mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 0.47A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -30V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -680mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
BSH203,215 Features
a continuous drain current (ID) of -470mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
a threshold voltage of -680mV
BSH203,215 Applications
There are a lot of Nexperia USA Inc.
BSH203,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSH203,215 More Descriptions
BSH203 Sereies 30 V 1.65 Ohm 2.2 nC 417 mW P-Channel Silicon SMT MOSFET - SOT-23
30V 470mA 900m¦¸@4.5V,280mA 417mW 680mV@1mA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET P-CH 30V 470MA SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -280mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.66ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -680mV; Power Dissipation Pd: 417mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -470mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -30V; Voltage Vgs Max: -680mV; Voltage Vgs Rds on Measurement: -4.5V
30V 470mA 900m¦¸@4.5V,280mA 417mW 680mV@1mA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET P-CH 30V 470MA SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -280mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.66ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -680mV; Power Dissipation Pd: 417mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -470mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -30V; Voltage Vgs Max: -680mV; Voltage Vgs Rds on Measurement: -4.5V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
03 January 2024
Exploring the 2SK2225 Transistor's Capabilities
Ⅰ. Introduction to 2SK2225Ⅱ. Specifications of 2SK2225Ⅲ. The manufacturer of 2SK2225Ⅳ. Absolute maximum ratings of 2SK2225Ⅴ. How to use 2SK2225?Ⅵ. Where is 2SK2225 used?Ⅶ. How to improve the... -
04 January 2024
ULN2003ADR: A Powerful Chip that Drives High Current Loads
Ⅰ. ULN2003ADR descriptionⅡ. Symbol, footprint and pin configuration of ULN2003ADRⅢ. Specifications of ULN2003ADRⅣ. What are the application fields of ULN2003ADR?Ⅴ. Simplified block diagram of ULN2003ADRⅥ. How to correctly... -
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is... -
05 January 2024
N76E003AT20 Microcontroller Manufacturer, Specifications, Features and Package
Ⅰ. Introduction to N76E003AT20Ⅱ. N76E003AT20 manufacturerⅢ. Specifications of N76E003AT20Ⅳ. Features of N76E003AT20Ⅴ. Peripheral equipment and functions of N76E003AT20Ⅵ. Programming and burning of N76E003AT20Ⅶ. Package of N76E003AT20Ⅷ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.