Infineon Technologies BSC340N08NS3GATMA1

BSC340N08NS3GATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 756pF @ 40V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 23A.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 92A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).

BSC340N08NS3GATMA1 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 7A
the turn-off delay time is 11 ns
based on its rated peak drain current 92A.


BSC340N08NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSC340N08NS3GATMA1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching