Infineon Technologies BSC190N15NS3GATMA1
- Part Number:
- BSC190N15NS3GATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478778-BSC190N15NS3GATMA1
- Description:
- MOSFET N-CH 150V 50A TDSON-8
- Datasheet:
- BSC190N15NS3GATMA1
Infineon Technologies BSC190N15NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC190N15NS3GATMA1.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2011
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Reach Compliance Codenot_compliant
- Pin Count8
- JESD-30 CodeR-PDSO-F5
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max125W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs19m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 90μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds2420pF @ 75V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time53ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)50A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage150V
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)200A
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
BSC190N15NS3GATMA1 Description
BSC190N15NS3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the BSC190N15NS3GATMA1 is -55??C~150??C TJ and its maximum power dissipation is 125W Tc. BSC190N15NS3GATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.
BSC190N15NS3GATMA1 Features
Continuous Drain Current (ID): 50A
Gate to Source Voltage (Vgs): 20V
Drain to Source Breakdown Voltage: 150V
Turn-Off Delay Time: 25 ns
BSC190N15NS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
BSC190N15NS3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the BSC190N15NS3GATMA1 is -55??C~150??C TJ and its maximum power dissipation is 125W Tc. BSC190N15NS3GATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.
BSC190N15NS3GATMA1 Features
Continuous Drain Current (ID): 50A
Gate to Source Voltage (Vgs): 20V
Drain to Source Breakdown Voltage: 150V
Turn-Off Delay Time: 25 ns
BSC190N15NS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
BSC190N15NS3GATMA1 More Descriptions
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
Single N-Channel 150 V 19 mOhm 23 nC OptiMOS Power Mosfet - TDSON-8
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:150V; On Resistance
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Single N-Channel 150 V 19 mOhm 23 nC OptiMOS Power Mosfet - TDSON-8
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:150V; On Resistance
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
The three parts on the right have similar specifications to BSC190N15NS3GATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightRoHS StatusLead FreeContact PlatingPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Avalanche Energy Rating (Eas)REACH SVHCSurface MountAdditional FeatureSubcategoryDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)View Compare
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BSC190N15NS3GATMA113 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2011e3noActive1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALFLATnot_compliant8R-PDSO-F5Not Qualified1SINGLE WITH BUILT-IN DIODE1125W TcENHANCEMENT MODE125WDRAIN15 nsN-ChannelSWITCHING19m Ω @ 50A, 10V4V @ 90μAHalogen Free2420pF @ 75V50A Tc31nC @ 10V53ns8V 10V±20V6 ns25 ns50A3V20V150V150V200A150°C1.1mmROHS3 CompliantContains Lead---------------
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26 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2011e3noActive1 (Unlimited)5EAR99-MOSFET (Metal Oxide)DUALFLATnot_compliant8R-PDSO-F5Not Qualified1SINGLE WITH BUILT-IN DIODE-78W TcENHANCEMENT MODE78WDRAIN-N-ChannelSWITCHING19.6m Ω @ 45A, 10V4V @ 42μAHalogen Free2300pF @ 50V8.5A Ta 45A Tc34nC @ 10V22ns10V±20V--45A3V20V100V----ROHS3 CompliantContains LeadTinNOT SPECIFIEDNOT SPECIFIED60 mJNo SVHC---------
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--Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2011e3-Obsolete3 (168 Hours)5EAR99MATTE TINMOSFET (Metal Oxide)DUALFLATcompliant8R-PDSO-F5Not Qualified1SINGLE WITH BUILT-IN DIODE-2.8W Ta 43W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING11.9m Ω @ 30A, 10V2V @ 20μA-1370pF @ 15V11.9A Ta 30A Tc11nC @ 5V-4.5V 10V±20V-------120A--RoHS Compliant--2604060 mJ-YESAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30V11.9A0.0119Ohm30V--
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---PG-TDSON-8---Tape & Reel (TR)------------------------N Channel-15.9mΩ @ 50A,10V2.4V @ 72uA-----------------RoHS Compliant---------100V---9.4A63A Tc114W Tc
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