BSC190N15NS3GATMA1

Infineon Technologies BSC190N15NS3GATMA1

Part Number:
BSC190N15NS3GATMA1
Manufacturer:
Infineon Technologies
Ventron No:
2478778-BSC190N15NS3GATMA1
Description:
MOSFET N-CH 150V 50A TDSON-8
ECAD Model:
Datasheet:
BSC190N15NS3GATMA1

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Specifications
Infineon Technologies BSC190N15NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC190N15NS3GATMA1.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Reach Compliance Code
    not_compliant
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-F5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    19m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 90μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    2420pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    53ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    50A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    150V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
BSC190N15NS3GATMA1 Description
BSC190N15NS3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the BSC190N15NS3GATMA1 is -55??C~150??C TJ and its maximum power dissipation is 125W Tc. BSC190N15NS3GATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.

BSC190N15NS3GATMA1 Features
Continuous Drain Current (ID): 50A
Gate to Source Voltage (Vgs): 20V
Drain to Source Breakdown Voltage: 150V
Turn-Off Delay Time: 25 ns

BSC190N15NS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
BSC190N15NS3GATMA1 More Descriptions
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
Single N-Channel 150 V 19 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:150V; On Resistance
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Product Comparison
The three parts on the right have similar specifications to BSC190N15NS3GATMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    RoHS Status
    Lead Free
    Contact Plating
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Avalanche Energy Rating (Eas)
    REACH SVHC
    Surface Mount
    Additional Feature
    Subcategory
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    View Compare
  • BSC190N15NS3GATMA1
    BSC190N15NS3GATMA1
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    no
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    8
    R-PDSO-F5
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1
    125W Tc
    ENHANCEMENT MODE
    125W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    19m Ω @ 50A, 10V
    4V @ 90μA
    Halogen Free
    2420pF @ 75V
    50A Tc
    31nC @ 10V
    53ns
    8V 10V
    ±20V
    6 ns
    25 ns
    50A
    3V
    20V
    150V
    150V
    200A
    150°C
    1.1mm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC196N10NSGATMA1
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    no
    Active
    1 (Unlimited)
    5
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    8
    R-PDSO-F5
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    78W Tc
    ENHANCEMENT MODE
    78W
    DRAIN
    -
    N-Channel
    SWITCHING
    19.6m Ω @ 45A, 10V
    4V @ 42μA
    Halogen Free
    2300pF @ 50V
    8.5A Ta 45A Tc
    34nC @ 10V
    22ns
    10V
    ±20V
    -
    -
    45A
    3V
    20V
    100V
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    Tin
    NOT SPECIFIED
    NOT SPECIFIED
    60 mJ
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC119N03S G
    -
    -
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    -
    Obsolete
    3 (168 Hours)
    5
    EAR99
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    compliant
    8
    R-PDSO-F5
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    2.8W Ta 43W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    11.9m Ω @ 30A, 10V
    2V @ 20μA
    -
    1370pF @ 15V
    11.9A Ta 30A Tc
    11nC @ 5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    120A
    -
    -
    RoHS Compliant
    -
    -
    260
    40
    60 mJ
    -
    YES
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    11.9A
    0.0119Ohm
    30V
    -
    -
  • BSC159N10LSF G
    -
    -
    -
    PG-TDSON-8
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    -
    15.9mΩ @ 50A,10V
    2.4V @ 72uA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    9.4A63A Tc
    114W Tc
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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