Infineon Technologies BSC097N06NSATMA1

Name: BSC097N06NSATMA1
Brand: Infineon Technologies
SKU: 2478626-BSC097N06NSATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC097N06NSATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2478626-BSC097N06NSATMA1

Description:: MOSFET N-CH 60V 46A TDSON-8

ECAD Model:

Datasheet:: BSC097N06NSATMA1

Specifications

Infineon Technologies BSC097N06NSATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC097N06NSATMA1.

Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 36W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
3.3V @ 14μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1075pF @ 30V
Current - Continuous Drain (Id) @ 25°C
46A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
2ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
46A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
12A
Drain-source On Resistance-Max
0.0097Ohm
Avalanche Energy Rating (Eas)
13 mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BSC097N06NSATMA1 Description
BSC097N06NSATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the BSC097N06NSATMA1 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. BSC097N06NSATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.

BSC097N06NSATMA1 Features
Optimized for high performance SMPS, e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21

BSC097N06NSATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

BSC097N06NSATMA1 More Descriptions

Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8
Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC097N06NSATMA1
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N-CH, 60V, 46A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 36W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Product Comparison

The three parts on the right have similar specifications to BSC097N06NSATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

REACH SVHC

RoHS Status

Lead Free

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Qualification Status

Power Dissipation

Fall Time (Typ)

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Supplier Device Package

Max Power Dissipation

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Surface Mount

DS Breakdown Voltage-Min

View Compare
BSC097N06NSATMA1

Infineon Technologies

26 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2005

e3

Active

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 36W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.7m Ω @ 40A, 10V

3.3V @ 14μA

Halogen Free

1075pF @ 30V

46A Tc

15nC @ 10V

2ns

6V 10V

±20V

46A

2.8V

20V

60V

12A

0.0097Ohm

13 mJ

No SVHC

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC032N03SG

Infineon Technologies

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e3

Obsolete

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

-

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

7ns

4.5V 10V

±20V

100A

-

20V

-

23A

0.0049Ohm

550 mJ

-

RoHS Compliant

Lead Free

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

50A

8

Not Qualified

2.8W

5.4 ns

32 ns

30V

200A

-

-

-

-

-

-

-

BSC097N06NSATMA1 vs BSC032N03SG
BSC059N03ST

Infineon Technologies

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

5.5mOhm @ 50A, 10V

2V @ 35μA

-

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

4.8ns

4.5V 10V

±20V

50A

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

30V

50A

-

-

-

-

-

-

-

PG-TDSON-8-1

48W

30V

2.67nF

5.5 mΩ

-

-

BSC097N06NSATMA1 vs BSC059N03ST
BSC048N025S G

Infineon Technologies

-

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 63W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.8m Ω @ 50A, 10V

2V @ 35μA

-

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

19A

0.0048Ohm

185 mJ

-

RoHS Compliant

-

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

-

8

Not Qualified

-

-

-

-

200A

-

-

25V

-

-

YES

25V

BSC097N06NSATMA1 vs BSC048N025S G