Infineon Technologies BSC094N03S G

BSC094N03S G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 14.6A.Pulsed drain current is maximum rated peak drain current 140A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

BSC094N03S G Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 140A.
a 30V drain to source voltage (Vdss)


BSC094N03S G Applications
There are a lot of Infineon Technologies
BSC094N03S G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching