Infineon Technologies BSC0902NSI

Name: BSC0902NSI
Brand: Infineon Technologies
SKU: 3554158-BSC0902NSI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC0902NSI

Manufacturer:: Infineon Technologies

Ventron No:: 3554158-BSC0902NSI

Description:: MOSFET N-CH 30V 100A 8TDSON

ECAD Model:

Datasheet:: BSC0902NSI

Specifications

Infineon Technologies BSC0902NSI technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC0902NSI.

Package / Case
PG-TDSON-8
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

BSC0902NSI Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSC0902NSI or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSC0902NSI. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to BSC0902NSI.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Mount

Number of Pins

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
BSC0902NSI

Infineon Technologies

PG-TDSON-8

Tape & Reel (TR)

RoHS Compliant

-

-

-

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-

-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

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-

-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC024N025S G

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~150°C TJ

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 89W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.4m Ω @ 50A, 10V

2V @ 90μA

6530pF @ 15V

27A Ta 100A Tc

52nC @ 5V

25V

4.5V 10V

±20V

27A

0.0037Ohm

200A

25V

800 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSC0902NSI vs BSC024N025S G
BSC032N03SG

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

RoHS Compliant

Surface Mount

-

SILICON

-55°C~150°C TJ

OptiMOS™

2004

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

-

4.5V 10V

±20V

23A

0.0049Ohm

200A

-

550 mJ

Surface Mount

8

30V

50A

2.8W

7ns

5.4 ns

32 ns

100A

20V

30V

Lead Free

-

-

-

-

BSC0902NSI vs BSC032N03SG
BSC059N03ST

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

Non-RoHS Compliant

Surface Mount

-

-

-55°C~150°C TJ

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

5.5mOhm @ 50A, 10V

2V @ 35μA

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

Surface Mount

8

30V

50A

-

4.8ns

-

-

50A

-

-

Contains Lead

PG-TDSON-8-1

48W

2.67nF

5.5 mΩ

BSC0902NSI vs BSC059N03ST