BSC0901NS

Infineon Technologies BSC0901NS

Part Number:
BSC0901NS
Manufacturer:
Infineon Technologies
Ventron No:
2482398-BSC0901NS
Description:
MOSFET N-CH 30V 100A 8TDSON
ECAD Model:
Datasheet:
BSC0901NS

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Specifications
Infineon Technologies BSC0901NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC0901NS.
  • Package / Case
    PG-TDSON-8
  • Packaging
    Tape & Reel (TR)
  • FET Type
    N Channel
  • Rds On (Max) @ Id, Vgs
    1.9mΩ @ 30A,10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250uA
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (Id) @ 25°C
    28A
  • Power Dissipation-Max (Ta=25°C)
    2.5W
  • RoHS Status
    RoHS Compliant
Description
BSC0901NS Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSC0901NS or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSC0901NS. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to BSC0901NS.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    RoHS Status
    Mount
    Mounting Type
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    Supplier Device Package
    Max Power Dissipation
    Rise Time
    Input Capacitance
    Rds On Max
    Surface Mount
    HTS Code
    Reach Compliance Code
    JESD-30 Code
    Case Connection
    DS Breakdown Voltage-Min
    View Compare
  • BSC0901NS
    BSC0901NS
    PG-TDSON-8
    Tape & Reel (TR)
    N Channel
    1.9mΩ @ 30A,10V
    2.2V @ 250uA
    30V
    28A
    2.5W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC032N03S
    8-PowerTDFN
    Tape & Reel (TR)
    N-Channel
    3.2m Ω @ 50A, 10V
    2V @ 70μA
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    Surface Mount
    8
    SILICON
    -55°C~150°C TJ
    OptiMOS™
    2004
    e0
    Discontinued
    1 (Unlimited)
    8
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    235
    50A
    NOT SPECIFIED
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 78W Tc
    ENHANCEMENT MODE
    SWITCHING
    5080pF @ 15V
    23A Ta 100A Tc
    39nC @ 5V
    4.5V 10V
    ±20V
    50A
    23A
    0.0049Ohm
    200A
    550 mJ
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC059N03ST
    8-PowerTDFN
    Tape & Reel (TR)
    N-Channel
    5.5mOhm @ 50A, 10V
    2V @ 35μA
    30V
    -
    -
    Non-RoHS Compliant
    Surface Mount
    Surface Mount
    8
    -
    -55°C~150°C TJ
    OptiMOS™
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    -
    30V
    MOSFET (Metal Oxide)
    -
    -
    -
    50A
    -
    -
    -
    -
    -
    -
    -
    -
    2670pF @ 15V
    19A Ta 89A Tc
    21nC @ 5V
    4.5V 10V
    ±20V
    50A
    -
    -
    -
    -
    Contains Lead
    PG-TDSON-8-1
    48W
    4.8ns
    2.67nF
    5.5 mΩ
    -
    -
    -
    -
    -
    -
  • BSC059N03S G
    8-PowerTDFN
    Tape & Reel (TR)
    N-Channel
    5.5m Ω @ 50A, 10V
    2V @ 35μA
    30V
    -
    -
    RoHS Compliant
    -
    Surface Mount
    -
    SILICON
    -55°C~150°C TJ
    OptiMOS™
    2011
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    260
    -
    40
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    17.5W Ta 48W Tc
    ENHANCEMENT MODE
    SWITCHING
    2670pF @ 15V
    17.5A Ta 73A Tc
    21nC @ 5V
    4.5V 10V
    ±20V
    -
    17.5A
    0.0086Ohm
    200A
    150 mJ
    -
    -
    -
    -
    -
    -
    YES
    8541.29.00.95
    compliant
    R-PDSO-F8
    DRAIN
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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