Infineon Technologies BSC0901NS
- Part Number:
- BSC0901NS
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482398-BSC0901NS
- Description:
- MOSFET N-CH 30V 100A 8TDSON
- Datasheet:
- BSC0901NS
Infineon Technologies BSC0901NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC0901NS.
- Package / CasePG-TDSON-8
- PackagingTape & Reel (TR)
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs1.9mΩ @ 30A,10V
- Vgs(th) (Max) @ Id2.2V @ 250uA
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (Id) @ 25°C28A
- Power Dissipation-Max (Ta=25°C)2.5W
- RoHS StatusRoHS Compliant
BSC0901NS Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSC0901NS or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSC0901NS. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSC0901NS or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSC0901NS. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to BSC0901NS.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusMountMounting TypeNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeSupplier Device PackageMax Power DissipationRise TimeInput CapacitanceRds On MaxSurface MountHTS CodeReach Compliance CodeJESD-30 CodeCase ConnectionDS Breakdown Voltage-MinView Compare
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BSC0901NSPG-TDSON-8Tape & Reel (TR)N Channel1.9mΩ @ 30A,10V2.2V @ 250uA30V28A2.5WRoHS Compliant----------------------------------------------------
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8-PowerTDFNTape & Reel (TR)N-Channel3.2m Ω @ 50A, 10V2V @ 70μA---Non-RoHS CompliantSurface MountSurface Mount8SILICON-55°C~150°C TJOptiMOS™2004e0Discontinued1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALNO LEAD23550ANOT SPECIFIED8Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODESWITCHING5080pF @ 15V23A Ta 100A Tc39nC @ 5V4.5V 10V±20V50A23A0.0049Ohm200A550 mJContains Lead-----------
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8-PowerTDFNTape & Reel (TR)N-Channel5.5mOhm @ 50A, 10V2V @ 35μA30V--Non-RoHS CompliantSurface MountSurface Mount8--55°C~150°C TJOptiMOS™--Discontinued1 (Unlimited)-----30VMOSFET (Metal Oxide)---50A--------2670pF @ 15V19A Ta 89A Tc21nC @ 5V4.5V 10V±20V50A----Contains LeadPG-TDSON-8-148W4.8ns2.67nF5.5 mΩ------
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8-PowerTDFNTape & Reel (TR)N-Channel5.5m Ω @ 50A, 10V2V @ 35μA30V--RoHS Compliant-Surface Mount-SILICON-55°C~150°C TJOptiMOS™2011e3Obsolete1 (Unlimited)8EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose Power-MOSFET (Metal Oxide)DUALFLAT260-408Not Qualified1SINGLE WITH BUILT-IN DIODE17.5W Ta 48W TcENHANCEMENT MODESWITCHING2670pF @ 15V17.5A Ta 73A Tc21nC @ 5V4.5V 10V±20V-17.5A0.0086Ohm200A150 mJ------YES8541.29.00.95compliantR-PDSO-F8DRAIN30V
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