Infineon Technologies BSC067N06LS3GATMA1

Name: BSC067N06LS3GATMA1
Brand: Infineon Technologies
SKU: 2478803-BSC067N06LS3GATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC067N06LS3GATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2478803-BSC067N06LS3GATMA1

Description:: MOSFET N-CH 60V 50A TDSON-8

ECAD Model:

Datasheet:: BSC067N06LS3GATMA1

Specifications

Infineon Technologies BSC067N06LS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC067N06LS3GATMA1.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2011
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 69W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
5100pF @ 30V
Current - Continuous Drain (Id) @ 25°C
15A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Rise Time
26ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
15A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain-source On Resistance-Max
0.0067Ohm
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
47 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BSC067N06LS3GATMA1 Description
BSC067N06LS3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 50V. The operating temperature of BSC067N06LS3GATMA1 is -55°C~150°C TJ and its maximum power dissipation is 2.5W. BSC067N06LS3GATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of BSC067N06LS3GATMA1 is 15 ns and its Turn-Off Delay Time is 37 ns.

BSC067N06LS3GATMA1 Features
Ideal for high-frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance RDS(on)
Superior thermal resistance
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21

BSC067N06LS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

BSC067N06LS3GATMA1 More Descriptions

Trans MOSFET N-CH 60V 15A Automotive 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor
Single N-Channel 60 V 12.1 mOhm 30 nC OptiMOS Power Mosfet - TDSON-8
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Product Comparison

The three parts on the right have similar specifications to BSC067N06LS3GATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Additional Feature

Subcategory

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Voltage - Rated DC

Current Rating

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
BSC067N06LS3GATMA1

Infineon Technologies

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

no

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 69W Tc

ENHANCEMENT MODE

2.5W

DRAIN

15 ns

N-Channel

SWITCHING

6.7m Ω @ 50A, 10V

2.2V @ 35μA

Halogen Free

5100pF @ 30V

15A Ta 50A Tc

67nC @ 10V

26ns

4.5V 10V

±20V

7 ns

37 ns

15A

20V

60V

0.0067Ohm

200A

47 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC024N025S G

Infineon Technologies

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

-

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 89W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

2.4m Ω @ 50A, 10V

2V @ 90μA

-

6530pF @ 15V

27A Ta 100A Tc

52nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

-

0.0037Ohm

200A

800 mJ

RoHS Compliant

-

YES

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

25V

27A

25V

-

-

-

-

-

-

BSC067N06LS3GATMA1 vs BSC024N025S G
BSC022N03S

Infineon Technologies

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e0

-

Discontinued

1 (Unlimited)

5

EAR99

Tin/Lead (Sn/Pb)

MOSFET (Metal Oxide)

DUAL

NO LEAD

235

-

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 104W Tc

ENHANCEMENT MODE

-

-

9.7 ns

N-Channel

SWITCHING

2.2m Ω @ 50A, 10V

2V @ 100μA

-

7490pF @ 15V

28A Ta 100A Tc

58nC @ 5V

9ns

4.5V 10V

±20V

7 ns

42 ns

50A

20V

-

0.0033Ohm

200A

-

Non-RoHS Compliant

Contains Lead

-

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

-

-

30V

50A

-

-

-

-

BSC067N06LS3GATMA1 vs BSC022N03S
BSC042N03ST

Infineon Technologies

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

-

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

4.2mOhm @ 50A, 10V

2V @ 50μA

-

3660pF @ 15V

20A Ta 50A Tc

28nC @ 5V

5.8ns

4.5V 10V

±20V

-

-

50A

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

30V

-

-

30V

50A

PG-TDSON-8-5

62.5W

3.66nF

4.2 mΩ

BSC067N06LS3GATMA1 vs BSC042N03ST