Infineon Technologies BSC035N04LSGATMA1

BSC035N04LSGATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5100pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSC035N04LSGATMA1 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 21A
the turn-off delay time is 31 ns
based on its rated peak drain current 400A.


BSC035N04LSGATMA1 Applications
There are a lot of Infineon Technologies
BSC035N04LSGATMA1 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies