Infineon Technologies BSC027N03S G

BSC027N03S G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.The maximum input capacitance of this device is 6540pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 25A.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSC027N03S G Features
the avalanche energy rating (Eas) is 800 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)


BSC027N03S G Applications
There are a lot of Infineon Technologies
BSC027N03S G applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,