Infineon Technologies BSC022N04LSATMA1

Name: BSC022N04LSATMA1
Brand: Infineon Technologies
SKU: 2484857-BSC022N04LSATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC022N04LSATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2484857-BSC022N04LSATMA1

Description:: MOSFET N-CH 40V 100A TDSON-8

ECAD Model:

Datasheet:: BSC022N04LSATMA1

Specifications

Infineon Technologies BSC022N04LSATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC022N04LSATMA1.

Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BSC022N04
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 69W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 20V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Rise Time
6.8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
40V
Drain Current-Max (Abs) (ID)
25A
Drain-source On Resistance-Max
0.0032Ohm
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
70 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BSC022N04LSATMA1 Description
BSC022N04LSATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 40V. The operating temperature of BSC022N04LSATMA1 is -55°C~150°C TJ and its maximum power dissipation are 69W Tc. BSC022N04LSATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.

BSC022N04LSATMA1 Features
Optimized for high performance SMPS,e.g.sync.rec.
Very low on-resistance RDS(on)@VGS=4.5V
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Halogen-freeaccordingtoIEC61249-2-21

BSC022N04LSATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

BSC022N04LSATMA1 More Descriptions

Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled
Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS Power Mosfet - TDSON-8
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:40V; On Resistance
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHSInfineon SCT
Mosfet, N-Ch, 40V, 100A, 150Deg C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC022N04LSATMA1
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

Product Comparison

The three parts on the right have similar specifications to BSC022N04LSATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Additional Feature

HTS Code

Subcategory

Pin Count

Qualification Status

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Supplier Device Package

Voltage - Rated DC

Max Power Dissipation

Current Rating

Input Capacitance

Rds On Max

View Compare
BSC022N04LSATMA1

Infineon Technologies

26 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2012

e3

Active

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

BSC022N04

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.2m Ω @ 50A, 10V

2V @ 250μA

Halogen Free

2600pF @ 20V

100A Tc

37nC @ 10V

6.8ns

4.5V 10V

±20V

100A

20V

40V

25A

0.0032Ohm

40V

400A

70 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC094N03S G

Infineon Technologies

-

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

260

compliant

40

-

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 52W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.4m Ω @ 35A, 10V

2V @ 25μA

-

1800pF @ 15V

14.6A Ta 35A Tc

14nC @ 5V

-

4.5V 10V

±20V

-

-

-

14.6A

0.0094Ohm

-

140A

90 mJ

RoHS Compliant

-

YES

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

8541.29.00.95

FET General Purpose Power

8

Not Qualified

30V

30V

-

-

-

-

-

-

BSC022N04LSATMA1 vs BSC094N03S G
BSC042N03ST

Infineon Technologies

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

4.2mOhm @ 50A, 10V

2V @ 50μA

-

3660pF @ 15V

20A Ta 50A Tc

28nC @ 5V

5.8ns

4.5V 10V

±20V

50A

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

30V

-

PG-TDSON-8-5

30V

62.5W

50A

3.66nF

4.2 mΩ

BSC022N04LSATMA1 vs BSC042N03ST
BSC048N025S G

Infineon Technologies

-

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

5

EAR99

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

-

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 63W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.8m Ω @ 50A, 10V

2V @ 35μA

-

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

-

4.5V 10V

±20V

-

-

-

19A

0.0048Ohm

-

200A

185 mJ

RoHS Compliant

-

YES

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

FET General Purpose Power

8

Not Qualified

25V

25V

-

-

-

-

-

-

BSC022N04LSATMA1 vs BSC048N025S G