Infineon Technologies BSC022N03SG

Name: BSC022N03SG
Brand: Infineon Technologies
SKU: 3554680-BSC022N03SG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC022N03SG

Manufacturer:: Infineon Technologies

Ventron No:: 3554680-BSC022N03SG

Description:: MOSFET N-CH 30V 100A TDSON-8

ECAD Model:

Datasheet:: BSC022N03S

Specifications

Infineon Technologies BSC022N03SG technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC022N03SG.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
50A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds
8290pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
64nC @ 5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0033Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
200A
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BSC022N03SG Description
BSC022N03SG is a 30v OptiMOS?2 Power-Transistor. The Infineon BSC022N03SG can be applied in optimized technology for notebook DC-DC converters due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BSC022N03SG is in the TDSON-8 package with 2.8W power dissipation.

BSC022N03SG Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC' for target applications
Logic level I N-channel
Excellent gate charge x R Ds(on) product (FOM)
Very low on-resistance R Ds(on)
Superior thermal resistance
Avalanche rated; dv/dt rated
Pb-free lead plating; RoHS compliant

BSC022N03SG Applications
Notebook DC/DC converters
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator

BSC022N03SG More Descriptions

MOSFET N-CH 30V 100A TDSON-8
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to BSC022N03SG.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Turn On Delay Time

Drain Current-Max (Abs) (ID)

Avalanche Energy Rating (Eas)

Surface Mount

HTS Code

Reach Compliance Code

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
BSC022N03SG

Infineon Technologies

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

FLAT

260

50A

40

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 104W Tc

ENHANCEMENT MODE

2.8W

DRAIN

N-Channel

SWITCHING

2.2m Ω @ 50A, 10V

2V @ 110μA

8290pF @ 15V

28A Ta 100A Tc

64nC @ 5V

9ns

4.5V 10V

±20V

8 ns

45 ns

100A

20V

0.0033Ohm

30V

200A

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-
BSC022N03S

Infineon Technologies

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e0

Discontinued

1 (Unlimited)

5

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

NO LEAD

235

50A

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 104W Tc

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

2.2m Ω @ 50A, 10V

2V @ 100μA

7490pF @ 15V

28A Ta 100A Tc

58nC @ 5V

9ns

4.5V 10V

±20V

7 ns

42 ns

50A

20V

0.0033Ohm

-

200A

Non-RoHS Compliant

Contains Lead

9.7 ns

-

-

-

-

-

-

-

BSC022N03SG vs BSC022N03S
BSC032N03SG

Infineon Technologies

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

FLAT

260

50A

40

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

2.8W

DRAIN

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

7ns

4.5V 10V

±20V

5.4 ns

32 ns

100A

20V

0.0049Ohm

30V

200A

RoHS Compliant

Lead Free

-

23A

550 mJ

-

-

-

-

-

BSC022N03SG vs BSC032N03SG
BSC059N03S G

Infineon Technologies

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

8

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

8

R-PDSO-F8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

17.5W Ta 48W Tc

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

5.5m Ω @ 50A, 10V

2V @ 35μA

2670pF @ 15V

17.5A Ta 73A Tc

21nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

0.0086Ohm

-

200A

RoHS Compliant

-

-

17.5A

150 mJ

YES

8541.29.00.95

compliant

30V

30V

BSC022N03SG vs BSC059N03S G