Infineon Technologies BSC020N025S G
- Part Number:
- BSC020N025S G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492255-BSC020N025S G
- Description:
- MOSFET N-CH 25V 100A TDSON-8
- Datasheet:
- BSC020N025S G
Infineon Technologies BSC020N025S G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC020N025S G.
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-PDSO-F5
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.8W Ta 104W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 110μA
- Input Capacitance (Ciss) (Max) @ Vds8290pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)29A
- Drain-source On Resistance-Max0.0031Ohm
- Pulsed Drain Current-Max (IDM)200A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)800 mJ
- RoHS StatusRoHS Compliant
BSC020N025S G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8290pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [29A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 200A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
BSC020N025S G Features
the avalanche energy rating (Eas) is 800 mJ
based on its rated peak drain current 200A.
a 25V drain to source voltage (Vdss)
BSC020N025S G Applications
There are a lot of Infineon Technologies
BSC020N025S G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8290pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [29A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 200A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
BSC020N025S G Features
the avalanche energy rating (Eas) is 800 mJ
based on its rated peak drain current 200A.
a 25V drain to source voltage (Vdss)
BSC020N025S G Applications
There are a lot of Infineon Technologies
BSC020N025S G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSC020N025S G More Descriptions
MOSFET N-CH 25V 100A TDSON-8
Power Field-Effect Transistor, 29A I(D), 25V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Power Field-Effect Transistor, 29A I(D), 25V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to BSC020N025S G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsVoltage - Rated DCCurrent RatingContinuous Drain Current (ID)Lead FreeSupplier Device PackageMax Power DissipationRise TimeInput CapacitanceRds On MaxView Compare
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BSC020N025S GSurface Mount8-PowerTDFNYESSILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2003e3Obsolete1 (Unlimited)5EAR99MATTE TINAVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT260compliant408R-PDSO-F5Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 104W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2m Ω @ 50A, 10V2V @ 110μA8290pF @ 15V30A Ta 100A Tc66nC @ 5V25V4.5V 10V±20V29A0.0031Ohm200A25V800 mJRoHS Compliant------------
-
Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2004e0Discontinued1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEAD235-NOT SPECIFIED8-Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODE-N-ChannelSWITCHING3.2m Ω @ 50A, 10V2V @ 70μA5080pF @ 15V23A Ta 100A Tc39nC @ 5V-4.5V 10V±20V23A0.0049Ohm200A-550 mJNon-RoHS CompliantSurface Mount830V50A50AContains Lead-----
-
Surface Mount8-PowerTDFN---55°C~150°C TJTape & Reel (TR)OptiMOS™--Discontinued1 (Unlimited)-----MOSFET (Metal Oxide)-------------N-Channel-4.2mOhm @ 50A, 10V2V @ 50μA3660pF @ 15V20A Ta 50A Tc28nC @ 5V30V4.5V 10V±20V-----Non-RoHS CompliantSurface Mount830V50A50AContains LeadPG-TDSON-8-562.5W5.8ns3.66nF4.2 mΩ
-
Surface Mount8-PowerTDFNYESSILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2008e3Obsolete1 (Unlimited)5EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDcompliantNOT SPECIFIED8R-PDSO-F5Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 63W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.8m Ω @ 50A, 10V2V @ 35μA2670pF @ 15V19A Ta 89A Tc21nC @ 5V25V4.5V 10V±20V19A0.0048Ohm200A25V185 mJRoHS Compliant-----------
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