Infineon Technologies BSC017N04NS G

Name: BSC017N04NS G
Brand: Infineon Technologies
SKU: 3070257-BSC017N04NS G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC017N04NS G

Manufacturer:: Infineon Technologies

Ventron No:: 3070257-BSC017N04NS G

Description:: MOSFET N-CH 40V 100A TDSON-8

ECAD Model:

Datasheet:: BSC017N04NS G

Specifications

Infineon Technologies BSC017N04NS G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC017N04NS G.

Vgs(th) (Max) @ Id:
4V @ 85µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TDSON-8
Series:
OptiMOS™
Rds On (Max) @ Id, Vgs:
1.7 mOhm @ 50A, 10V
Power Dissipation (Max):
2.5W (Ta), 139W (Tc)
Packaging:
Tape & Reel (TR)
Package / Case:
8-PowerTDFN
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
8800pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
108nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 100A (Tc)

Description

part#BSC017N04NS G, Manufacturer:International Rectifier (Infineon Technologies) is available at ventronchip.com, see description of BSC017N04NS G as below .use the request quote form to request BSC017N04NS G price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for BSC017N04NS G depending on the quantity required, availability and warehouse location.

Product Comparison

The three parts on the right have similar specifications to BSC017N04NS G.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

HTS Code

Reach Compliance Code

JESD-30 Code

Case Connection

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
BSC017N04NS G

Infineon Technologies

4V @ 85µA

±20V

MOSFET (Metal Oxide)

PG-TDSON-8

OptiMOS™

1.7 mOhm @ 50A, 10V

2.5W (Ta), 139W (Tc)

Tape & Reel (TR)

8-PowerTDFN

-55°C ~ 150°C (TJ)

Surface Mount

8800pF @ 20V

108nC @ 10V

N-Channel

-

10V

40V

30A (Ta), 100A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC032N03S

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e0

Discontinued

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

NO LEAD

235

50A

NOT SPECIFIED

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

4.5V 10V

±20V

50A

23A

0.0049Ohm

200A

550 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

BSC017N04NS G vs BSC032N03S
BSC094N03S G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 52W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

9.4m Ω @ 35A, 10V

2V @ 25μA

1800pF @ 15V

14.6A Ta 35A Tc

14nC @ 5V

4.5V 10V

±20V

-

14.6A

0.0094Ohm

140A

90 mJ

RoHS Compliant

-

YES

8541.29.00.95

compliant

R-PDSO-F5

DRAIN

30V

30V

BSC017N04NS G vs BSC094N03S G
BSC059N03S G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

8

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

17.5W Ta 48W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

5.5m Ω @ 50A, 10V

2V @ 35μA

2670pF @ 15V

17.5A Ta 73A Tc

21nC @ 5V

4.5V 10V

±20V

-

17.5A

0.0086Ohm

200A

150 mJ

RoHS Compliant

-

YES

8541.29.00.95

compliant

R-PDSO-F8

DRAIN

30V

30V

BSC017N04NS G vs BSC059N03S G