APT75GP120B2G

Microsemi Corporation APT75GP120B2G

Part Number:
APT75GP120B2G
Manufacturer:
Microsemi Corporation
Ventron No:
3554846-APT75GP120B2G
Description:
IGBT 1200V 100A 1042W TMAX
ECAD Model:
Datasheet:
APT75GP120B2G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation APT75GP120B2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT75GP120B2G.
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    POWER MOS 7®
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    ULTRA FAST, LOW CONDUCTION LOSS
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    1.042kW
  • Current Rating
    100A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    1042W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    100A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    3.3V
  • Turn On Time
    60 ns
  • Test Condition
    600V, 75A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.9V @ 15V, 75A
  • Continuous Collector Current
    100A
  • Turn Off Time-Nom (toff)
    359 ns
  • IGBT Type
    PT
  • Gate Charge
    320nC
  • Current - Collector Pulsed (Icm)
    300A
  • Td (on/off) @ 25°C
    20ns/163ns
  • Switching Energy
    1620μJ (on), 2500μJ (off)
  • Height
    5.31mm
  • Length
    21.46mm
  • Width
    16.26mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT75GP120B2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT75GP120B2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT75GP120B2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT75GP120B2G More Descriptions
APT75GP120B2G Single 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3 Tab) T-MAX
IGBT PT MOS 7 Single 1200 V 75 A TO-247 MAX
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.