Microsemi Corporation APT26F120L
- Part Number:
- APT26F120L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2483616-APT26F120L
- Description:
- MOSFET N-CH 1200V 27A TO-264
- Datasheet:
- APT26F120L
Microsemi Corporation APT26F120L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT26F120L.
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Weight10.6g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishPure Matte Tin (Sn)
- Additional FeatureFAST SWITCHING, AVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC1.2kV
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Current Rating26A
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSingle
- Power Dissipation-Max1135W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time50 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs650m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id5V @ 2.5mA
- Input Capacitance (Ciss) (Max) @ Vds9670pF @ 25V
- Current - Continuous Drain (Id) @ 25°C27A Tc
- Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
- Rise Time31ns
- Drain to Source Voltage (Vdss)1200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)48 ns
- Turn-Off Delay Time170 ns
- Continuous Drain Current (ID)27A
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)22A
- Drain-source On Resistance-Max0.65Ohm
- Drain to Source Breakdown Voltage1.2kV
- Height5.21mm
- Length26.49mm
- Width20.5mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT26F120L Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9670pF @ 25V.This device has a continuous drain current (ID) of [27A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 22A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 170 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APT26F120L Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 170 ns
a 1200V drain to source voltage (Vdss)
APT26F120L Applications
There are a lot of Microsemi Corporation
APT26F120L applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9670pF @ 25V.This device has a continuous drain current (ID) of [27A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 22A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 170 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APT26F120L Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 170 ns
a 1200V drain to source voltage (Vdss)
APT26F120L Applications
There are a lot of Microsemi Corporation
APT26F120L applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
APT26F120L More Descriptions
Trans MOSFET N-CH Si 1.2KV 27A 3-Pin(3 Tab) TO-264 Tube
FREDFET MOS8 1200 V 26 A TO-264
APT26F120L Series 1200 V 0.58 Ohm N-Channel Power FREDFET - TO-264
Compliant Through Hole 20.5 mm 5.21 mm 26.49 mm 10.6 g 48 ns Lead Free
FREDFET MOS8 1200 V 26 A TO-264
APT26F120L Series 1200 V 0.58 Ohm N-Channel Power FREDFET - TO-264
Compliant Through Hole 20.5 mm 5.21 mm 26.49 mm 10.6 g 48 ns Lead Free
The three parts on the right have similar specifications to APT26F120L.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionCurrent RatingPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSeriesJESD-609 CodePower DissipationJEDEC-95 CodePulsed Drain Current-Max (IDM)Reach Compliance CodeLifecycle StatusView Compare
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APT26F120L22 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA10.6gSILICON-55°C~150°C TJTube1997yesActive1 (Unlimited)3EAR99Pure Matte Tin (Sn)FAST SWITCHING, AVALANCHE RATEDFET General Purpose Power1.2kVMOSFET (Metal Oxide)SINGLE26A3R-PSFM-T31Single1135W TcENHANCEMENT MODEDRAIN50 nsN-ChannelSWITCHING650m Ω @ 14A, 10V5V @ 2.5mA9670pF @ 25V27A Tc300nC @ 10V31ns1200V10V±30V48 ns170 ns27A30V22A0.65Ohm1.2kV5.21mm26.49mm20.5mmNoRoHS CompliantLead Free--------
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-Through HoleThrough HoleTO-247-3-SILICON-55°C~150°C TJTube1997yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPERAVALANCHE ENERGY RATEDFET General Purpose Power200VMOSFET (Metal Oxide)SINGLE67A3R-PSFM-T31SINGLE WITH BUILT-IN DIODE370W TcENHANCEMENT MODEDRAIN14 nsN-ChannelSWITCHING38m Ω @ 500mA, 10V4V @ 1mA6120pF @ 25V67A Tc225nC @ 10V21ns-10V±30V10 ns18 ns67A30V-0.038Ohm----NoRoHS CompliantLead FreePOWER MOS V®e1370WTO-247AD268A--
-
-Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA---55°C~150°C TJTube2004yesObsolete1 (Unlimited)-----600VMOSFET (Metal Oxide)-20.7A3---208W Tc---N-Channel-190m Ω @ 13.1A, 10V3.9V @ 1mA2440pF @ 25V20.7A Tc114nC @ 10V--10V±20V--20.7A--------RoHS CompliantLead FreeCoolMOS™----unknown-
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31 WeeksThrough HoleThrough HoleTO-247-3-SILICON-55°C~150°C TJTube1997yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)HIGH VOLTAGE-200VMOSFET (Metal Oxide)SINGLE67A-R-PSFM-T31SINGLE WITH BUILT-IN DIODE370W TcENHANCEMENT MODEDRAIN14 nsN-ChannelSWITCHING38m Ω @ 500mA, 10V4V @ 1mA6120pF @ 25V67A Tc225nC @ 10V21ns-10V±30V10 ns48 ns67A30V-0.038Ohm----NoRoHS CompliantLead FreePOWER MOS V®e1370W-268A-IN PRODUCTION (Last Updated: 1 month ago)
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