Microsemi Corporation APT20M38BVRG
- Part Number:
- APT20M38BVRG
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2851119-APT20M38BVRG
- Description:
- MOSFET N-CH 200V 67A TO-247
- Datasheet:
- APT20M38BVRG
Microsemi Corporation APT20M38BVRG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT20M38BVRG.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time31 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPOWER MOS V®
- Published1997
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureHIGH VOLTAGE
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Current Rating67A
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max370W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation370W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs38m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds6120pF @ 25V
- Current - Continuous Drain (Id) @ 25°C67A Tc
- Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
- Rise Time21ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)67A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.038Ohm
- Pulsed Drain Current-Max (IDM)268A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT20M38BVRG Overview
The maximum input capacitance of this device is 6120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 67A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 268A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT20M38BVRG Features
a continuous drain current (ID) of 67A
the turn-off delay time is 48 ns
based on its rated peak drain current 268A.
APT20M38BVRG Applications
There are a lot of Microsemi Corporation
APT20M38BVRG applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 6120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 67A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 268A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT20M38BVRG Features
a continuous drain current (ID) of 67A
the turn-off delay time is 48 ns
based on its rated peak drain current 268A.
APT20M38BVRG Applications
There are a lot of Microsemi Corporation
APT20M38BVRG applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
APT20M38BVRG More Descriptions
Mosfet Mos5 200 V 38 Mohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT20M38BVRG
APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247
Trans MOSFET N-CH 200V 67A 3-Pin(3 Tab) TO-247 Tube
APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247
Trans MOSFET N-CH 200V 67A 3-Pin(3 Tab) TO-247 Tube
The three parts on the right have similar specifications to APT20M38BVRG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyTerminal PositionCurrent RatingJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)SubcategoryJEDEC-95 CodeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureRds On MaxView Compare
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APT20M38BVRGIN PRODUCTION (Last Updated: 1 month ago)31 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubePOWER MOS V®1997e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)HIGH VOLTAGE200VMOSFET (Metal Oxide)SINGLE67AR-PSFM-T31SINGLE WITH BUILT-IN DIODE370W TcENHANCEMENT MODE370WDRAIN14 nsN-ChannelSWITCHING38m Ω @ 500mA, 10V4V @ 1mA6120pF @ 25V67A Tc225nC @ 10V21ns10V±30V10 ns48 ns67A30V0.038Ohm268ANoRoHS CompliantLead Free---------------
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--Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubePOWER MOS 8™1997e3yesActive1 (Unlimited)2-PURE MATTE TINAVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLE-R-PSSO-G21SINGLE WITH BUILT-IN DIODE415W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING290m Ω @ 11A, 10V5V @ 1mA4415pF @ 25V24A Tc110nC @ 10V-10V±30V--24A-0.29Ohm80A-RoHS Compliant-GULL WING245303Not Qualified600V600V615 mJ------
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--Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubePOWER MOS V®1997e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPERAVALANCHE ENERGY RATED200VMOSFET (Metal Oxide)SINGLE67AR-PSFM-T31SINGLE WITH BUILT-IN DIODE370W TcENHANCEMENT MODE370WDRAIN14 nsN-ChannelSWITCHING38m Ω @ 500mA, 10V4V @ 1mA6120pF @ 25V67A Tc225nC @ 10V21ns10V±30V10 ns18 ns67A30V0.038Ohm268ANoRoHS CompliantLead Free---3----FET General Purpose PowerTO-247AD----
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--Through HoleThrough HoleTO-247-3--55°C~175°C TJBulk----Obsolete1 (Unlimited)-----SiCFET (Silicon Carbide)-----175W Tc----N-Channel-175mOhm @ 10A, 20V2.5V @ 1mA-25A Tc72nC @ 20V-20V25V, -10V--25A----RoHS Compliant------1200V----TO-247175°C-55°C175 mΩ
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