APT20M38BVRG

Microsemi Corporation APT20M38BVRG

Part Number:
APT20M38BVRG
Manufacturer:
Microsemi Corporation
Ventron No:
2851119-APT20M38BVRG
Description:
MOSFET N-CH 200V 67A TO-247
ECAD Model:
Datasheet:
APT20M38BVRG

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Specifications
Microsemi Corporation APT20M38BVRG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT20M38BVRG.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    31 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    POWER MOS V®
  • Published
    1997
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    HIGH VOLTAGE
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Current Rating
    67A
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    370W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    370W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    38m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    6120pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    67A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    225nC @ 10V
  • Rise Time
    21ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    67A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.038Ohm
  • Pulsed Drain Current-Max (IDM)
    268A
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT20M38BVRG Overview
The maximum input capacitance of this device is 6120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 67A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 268A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

APT20M38BVRG Features
a continuous drain current (ID) of 67A
the turn-off delay time is 48 ns
based on its rated peak drain current 268A.


APT20M38BVRG Applications
There are a lot of Microsemi Corporation
APT20M38BVRG applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
APT20M38BVRG More Descriptions
Mosfet Mos5 200 V 38 Mohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT20M38BVRG
APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247
Trans MOSFET N-CH 200V 67A 3-Pin(3 Tab) TO-247 Tube
Product Comparison
The three parts on the right have similar specifications to APT20M38BVRG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Technology
    Terminal Position
    Current Rating
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Subcategory
    JEDEC-95 Code
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Rds On Max
    View Compare
  • APT20M38BVRG
    APT20M38BVRG
    IN PRODUCTION (Last Updated: 1 month ago)
    31 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    POWER MOS V®
    1997
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    HIGH VOLTAGE
    200V
    MOSFET (Metal Oxide)
    SINGLE
    67A
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    370W Tc
    ENHANCEMENT MODE
    370W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    38m Ω @ 500mA, 10V
    4V @ 1mA
    6120pF @ 25V
    67A Tc
    225nC @ 10V
    21ns
    10V
    ±30V
    10 ns
    48 ns
    67A
    30V
    0.038Ohm
    268A
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • APT23F60S
    -
    -
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    POWER MOS 8™
    1997
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    PURE MATTE TIN
    AVALANCHE RATED, HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    415W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    290m Ω @ 11A, 10V
    5V @ 1mA
    4415pF @ 25V
    24A Tc
    110nC @ 10V
    -
    10V
    ±30V
    -
    -
    24A
    -
    0.29Ohm
    80A
    -
    RoHS Compliant
    -
    GULL WING
    245
    30
    3
    Not Qualified
    600V
    600V
    615 mJ
    -
    -
    -
    -
    -
    -
  • APT20M38BVFRG
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    POWER MOS V®
    1997
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    AVALANCHE ENERGY RATED
    200V
    MOSFET (Metal Oxide)
    SINGLE
    67A
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    370W Tc
    ENHANCEMENT MODE
    370W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    38m Ω @ 500mA, 10V
    4V @ 1mA
    6120pF @ 25V
    67A Tc
    225nC @ 10V
    21ns
    10V
    ±30V
    10 ns
    18 ns
    67A
    30V
    0.038Ohm
    268A
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    3
    -
    -
    -
    -
    FET General Purpose Power
    TO-247AD
    -
    -
    -
    -
  • APT25SM120B
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Bulk
    -
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    SiCFET (Silicon Carbide)
    -
    -
    -
    -
    -
    175W Tc
    -
    -
    -
    -
    N-Channel
    -
    175mOhm @ 10A, 20V
    2.5V @ 1mA
    -
    25A Tc
    72nC @ 20V
    -
    20V
    25V, -10V
    -
    -
    25A
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    1200V
    -
    -
    -
    -
    TO-247
    175°C
    -55°C
    175 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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