AOD1N60

Alpha & Omega Semiconductor Inc. AOD1N60

Part Number:
AOD1N60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2477993-AOD1N60
Description:
MOSFET N-CH 600V 1.3A TO252
ECAD Model:
Datasheet:
AOD1N60

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Specifications
Alpha & Omega Semiconductor Inc. AOD1N60 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD1N60.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    45W Tc
  • Power Dissipation
    45W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9 Ω @ 650mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    1.3A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    2.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AOD1N60 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 160pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).

AOD1N60 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 20 ns
a threshold voltage of 3V


AOD1N60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD1N60 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AOD1N60 More Descriptions
Trans Mosfet N-ch 600V 1.3A 3-PIN(2 TAB) Dpak T/r / Mosfet N-ch 600V 1.3A TO252
IC REG LINEAR 1.8V 300MA SOT23-5
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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