AO3414

Alpha & Omega Semiconductor Inc. AO3414

Part Number:
AO3414
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2480912-AO3414
Description:
MOSFET N-CH 20V 4.2A SOT23
ECAD Model:
Datasheet:
AO3414 AO3414

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Specifications
Alpha & Omega Semiconductor Inc. AO3414 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3414.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Turn On Delay Time
    2.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    436pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.2nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    3A
  • Threshold Voltage
    700mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    4.2A
  • Drain-source On Resistance-Max
    0.05Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.25mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AO3414 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 436pF @ 10V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.A device's drain current is its maximum continuous current, and this device's drain current is 4.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 700mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

AO3414 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 21 ns
a threshold voltage of 700mV


AO3414 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3414 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
AO3414 More Descriptions
Transistor MOSFET N-CH 20V 3A 3-Pin SOT-23
20V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to AO3414.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Radiation Hardening
    RoHS Status
    Lead Free
    Pin Count
    Drain to Source Voltage (Vdss)
    View Compare
  • AO3414
    AO3414
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.4W Ta
    ENHANCEMENT MODE
    1.4W
    2.5 ns
    N-Channel
    SWITCHING
    50m Ω @ 4.2A, 4.5V
    1V @ 250μA
    436pF @ 10V
    3A Ta
    6.2nC @ 4.5V
    1.8V 4.5V
    ±8V
    21 ns
    3A
    700mV
    8V
    4.2A
    0.05Ohm
    20V
    150°C
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • AO3403
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1.4W Ta
    ENHANCEMENT MODE
    1.4W
    -
    P-Channel
    SWITCHING
    115m Ω @ 2.6A, 10V
    1.4V @ 250μA
    315pF @ 15V
    2.6A Ta
    7.2nC @ 10V
    2.5V 10V
    ±12V
    -
    2.6A
    -
    12V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    3
    30V
  • AO3419
    18 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.4W Ta
    ENHANCEMENT MODE
    1.4W
    11 ns
    P-Channel
    SWITCHING
    85m Ω @ 3.5A, 10V
    1.4V @ 250μA
    400pF @ 10V
    3.5A Ta
    4.4nC @ 4.5V
    1.8V 10V
    ±12V
    22 ns
    -3.5A
    -500mV
    12V
    -
    0.075Ohm
    -20V
    150°C
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    3
    20V
  • AO3434A
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Digi-Reel®
    2009
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1.4W Ta
    -
    -
    -
    N-Channel
    -
    52m Ω @ 4A, 10V
    1.5V @ 250μA
    245pF @ 15V
    4A Ta
    10nC @ 10V
    2.5V 10V
    ±12V
    -
    4A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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