Alpha & Omega Semiconductor Inc. AO3414
- Part Number:
- AO3414
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2480912-AO3414
- Description:
- MOSFET N-CH 20V 4.2A SOT23
Alpha & Omega Semiconductor Inc. AO3414 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3414.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time2.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds436pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3A Ta
- Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)3A
- Threshold Voltage700mV
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)4.2A
- Drain-source On Resistance-Max0.05Ohm
- Drain to Source Breakdown Voltage20V
- Max Junction Temperature (Tj)150°C
- Height1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO3414 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 436pF @ 10V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.A device's drain current is its maximum continuous current, and this device's drain current is 4.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 700mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
AO3414 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 21 ns
a threshold voltage of 700mV
AO3414 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3414 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 436pF @ 10V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.A device's drain current is its maximum continuous current, and this device's drain current is 4.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 700mV.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
AO3414 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 21 ns
a threshold voltage of 700mV
AO3414 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3414 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
AO3414 More Descriptions
Transistor MOSFET N-CH 20V 3A 3-Pin SOT-23
20V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
French Electronic Distributor since 1988
20V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
French Electronic Distributor since 1988
The three parts on the right have similar specifications to AO3414.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRadiation HardeningRoHS StatusLead FreePin CountDrain to Source Voltage (Vdss)View Compare
-
AO341416 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2006Not For New Designs1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W2.5 nsN-ChannelSWITCHING50m Ω @ 4.2A, 4.5V1V @ 250μA436pF @ 10V3A Ta6.2nC @ 4.5V1.8V 4.5V±8V21 ns3A700mV8V4.2A0.05Ohm20V150°C1.25mmNoROHS3 CompliantLead Free---
-
16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009Not For New Designs1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE-1.4W TaENHANCEMENT MODE1.4W-P-ChannelSWITCHING115m Ω @ 2.6A, 10V1.4V @ 250μA315pF @ 15V2.6A Ta7.2nC @ 10V2.5V 10V±12V-2.6A-12V-----NoROHS3 Compliant-330V
-
18 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009Active1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W11 nsP-ChannelSWITCHING85m Ω @ 3.5A, 10V1.4V @ 250μA400pF @ 10V3.5A Ta4.4nC @ 4.5V1.8V 10V±12V22 ns-3.5A-500mV12V-0.075Ohm-20V150°C1.25mmNoROHS3 CompliantLead Free320V
-
16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJDigi-Reel®2009Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)-----1.4W Ta---N-Channel-52m Ω @ 4A, 10V1.5V @ 250μA245pF @ 15V4A Ta10nC @ 10V2.5V 10V±12V-4A--------ROHS3 Compliant--30V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 March 2024
AMS1117-3.3 Voltage Regulator Instructions for Use: From Principle to Application
Ⅰ. Introduction to AMS1117-3.3Ⅱ. Symbol, footprint and pin configuration of AMS1117-3.3Ⅲ. What are the characteristics of AMS1117-3.3?Ⅳ. How does AMS1117-3.3 work?Ⅴ. Application cases of AMS1117-3.3Ⅵ. How to wire... -
07 March 2024
BTS50085-1TMA Alternatives, Advantages, Usage and Other Details
Ⅰ. Overview of BTS50085-1TMAⅡ. Technical parameters of BTS50085-1TMAⅢ. BTS50085-1TMA input circuitⅣ. What are the advantages of BTS50085-1TMA compared with other similar products?Ⅴ. Usage of BTS50085-1TMAⅥ. How to install... -
08 March 2024
A Complete Guide to the TP4056 Battery Charger Module
Ⅰ. What is TP4056?Ⅱ. Block diagram of TP4056Ⅲ. Main parameters of TP4056Ⅳ. Pins and functions of TP4056Ⅴ. TP4056 charging circuit diagram explanationⅥ. Battery charging process of TP4056Ⅶ. Application... -
08 March 2024
In-depth Analysis of SS34 Schottky Diode
Ⅰ. Overview of SS34Ⅱ. Purpose of SS34 diodeⅢ. Technical parameters of SS34 diodeⅣ. Advantages of SS34 diodesⅤ. Working principle of SS34 diodeⅥ. Typical characteristics of SS34 diodesⅦ. Case...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.