Alpha & Omega Semiconductor Inc. AO3413

Name: AO3413
Brand: Alpha & Omega Semiconductor Inc.
SKU: 2478966-AO3413
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AO3413

Manufacturer:: Alpha & Omega Semiconductor Inc.

Ventron No:: 2478966-AO3413

Description:: MOSFET P-CH 20V 3A SOT23

ECAD Model:

Datasheet:: AO3413

Specifications

Alpha & Omega Semiconductor Inc. AO3413 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3413.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.4W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
97m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A Ta
Gate Charge (Qg) (Max) @ Vgs
6.1nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
3A
Gate to Source Voltage (Vgs)
8V
Drain-source On Resistance-Max
0.08Ohm
DS Breakdown Voltage-Min
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

AO3413 Overview
The maximum input capacitance of this device is 540pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

AO3413 Features
a continuous drain current (ID) of 3A
a 20V drain to source voltage (Vdss)

AO3413 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3413 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

AO3413 More Descriptions

Trans MOSFET P-CH 20V 3A 3-Pin SOT-23
20V 3A 97m´Î@4.5V3A 1.4W 1V@250Ã×A P Channel SOT-23-3L MOSFETs ROHS
Small Signal Field-Effect Transistor, 4.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
20V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to AO3413.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Radiation Hardening

RoHS Status

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Threshold Voltage

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Lead Free

HTS Code

Subcategory

Qualification Status

Reach Compliance Code

View Compare
AO3413

Alpha & Omega Semiconductor Inc.

18 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

1.4W Ta

ENHANCEMENT MODE

1.4W

P-Channel

SWITCHING

97m Ω @ 3A, 4.5V

1V @ 250μA

540pF @ 10V

3A Ta

6.1nC @ 4.5V

20V

1.8V 4.5V

±8V

3A

8V

0.08Ohm

20V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
AO3419

Alpha & Omega Semiconductor Inc.

18 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

1.4W Ta

ENHANCEMENT MODE

1.4W

P-Channel

SWITCHING

85m Ω @ 3.5A, 10V

1.4V @ 250μA

400pF @ 10V

3.5A Ta

4.4nC @ 4.5V

20V

1.8V 10V

±12V

-3.5A

12V

0.075Ohm

-

No

ROHS3 Compliant

1

11 ns

22 ns

-500mV

-20V

150°C

1.25mm

Lead Free

-

-

-

-

AO3413 vs AO3419
AO3434

Alpha & Omega Semiconductor Inc.

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

1W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

52m Ω @ 4.2A, 10V

1.8V @ 250μA

340pF @ 15V

3.5A Ta

7.2nC @ 10V

30V

4.5V 10V

±20V

3.5A

-

0.052Ohm

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

8541.29.00.95

FET General Purpose Power

Not Qualified

-

AO3413 vs AO3434
AO3460L

Alpha & Omega Semiconductor Inc.

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1.4W Ta

-

-

N-Channel

-

1.7 Ω @ 650mA, 10V

2.5V @ 250μA

27pF @ 30V

650mA Ta

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

AO3413 vs AO3460L