AFT23H200-4S2LR6

NXP USA Inc. AFT23H200-4S2LR6

Part Number:
AFT23H200-4S2LR6
Manufacturer:
NXP USA Inc.
Ventron No:
2477335-AFT23H200-4S2LR6
Description:
FET RF 2CH 65V 2.3GHZ NI1230-4
ECAD Model:
Datasheet:
AFT23H200-4S2LR6

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Specifications
NXP USA Inc. AFT23H200-4S2LR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT23H200-4S2LR6.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-1230-4LS2L
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.40
  • Subcategory
    FET General Purpose Power
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    2.3GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Operating Temperature (Max)
    150°C
  • Current - Test
    500mA
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS (Dual)
  • Gain
    15.3dB
  • Power - Output
    45W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    294W
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
AFT23H200-4S2LR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT23H200-4S2LR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT23H200-4S2LR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT23H200-4S2LR6 More Descriptions
Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.3 @ 2300 MHz, 28 V, LDMOS, SOT1800
Transistor RF FET N-CH 65V 2300MHz to 2400MHz 6-Pin NI-1230 T/R
Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L
FET RF 2CH 65V 2.3GHZ NI1230-4
Product Comparison
The three parts on the right have similar specifications to AFT23H200-4S2LR6.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated
    HTS Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Operating Temperature (Max)
    Current - Test
    Polarity/Channel Type
    Transistor Type
    Gain
    Power - Output
    FET Technology
    Power Dissipation-Max (Abs)
    Voltage - Test
    RoHS Status
    Configuration
    View Compare
  • AFT23H200-4S2LR6
    AFT23H200-4S2LR6
    10 Weeks
    NI-1230-4LS2L
    Tape & Reel (TR)
    2006
    Active
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.3GHz
    40
    150°C
    500mA
    N-CHANNEL
    LDMOS (Dual)
    15.3dB
    45W
    METAL-OXIDE SEMICONDUCTOR
    294W
    28V
    ROHS3 Compliant
    -
    -
  • AFT26P100-4WGSR3
    10 Weeks
    -
    Tape & Reel (TR)
    2006
    Not For New Designs
    Not Applicable
    EAR99
    -
    8541.29.00.75
    -
    260
    -
    40
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
  • AFT26H250-24SR6
    10 Weeks
    NI-1230-4LS2L
    Tape & Reel (TR)
    2006
    Active
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.5GHz
    40
    225°C
    700mA
    N-CHANNEL
    LDMOS
    14.1dB
    50W
    METAL-OXIDE SEMICONDUCTOR
    -
    28V
    ROHS3 Compliant
    Single
  • AFT21H350W03SR6
    10 Weeks
    NI-1230S
    Tape & Reel (TR)
    2006
    Not For New Designs
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.11GHz
    40
    125°C
    750mA
    N-CHANNEL
    LDMOS
    16.4dB
    63W
    METAL-OXIDE SEMICONDUCTOR
    -
    28V
    ROHS3 Compliant
    Single
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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