AFT26H250-24SR6

NXP USA Inc. AFT26H250-24SR6

Part Number:
AFT26H250-24SR6
Manufacturer:
NXP USA Inc.
Ventron No:
2477506-AFT26H250-24SR6
Description:
FET RF 2CH 65V 2.5GHZ NI1230S-4
ECAD Model:
Datasheet:
AFT26H250-24SR6

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Specifications
NXP USA Inc. AFT26H250-24SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT26H250-24SR6.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-1230-4LS2L
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.40
  • Subcategory
    FET General Purpose Power
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    2.5GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Operating Temperature (Max)
    225°C
  • Configuration
    Single
  • Current - Test
    700mA
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    14.1dB
  • Power - Output
    50W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
AFT26H250-24SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT26H250-24SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT26H250-24SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT26H250-24SR6 More Descriptions
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V, CFM6F, RoHSNXP Semiconductors SCT
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1800
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
Linear Voltage Regulator, LDO, Low Power, 100 mA Vout: 5.0 V; 0.5%
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
FET RF NCH 65V 2690MHZ NI12304S2
AIRFAST RF POWER LDMOS TRANSISTO
FET RF 2CH 65V 2.5GHZ NI1230S-4
Product Comparison
The three parts on the right have similar specifications to AFT26H250-24SR6.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated
    HTS Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Operating Temperature (Max)
    Configuration
    Current - Test
    Polarity/Channel Type
    Transistor Type
    Gain
    Power - Output
    FET Technology
    Voltage - Test
    RoHS Status
    View Compare
  • AFT26H250-24SR6
    AFT26H250-24SR6
    10 Weeks
    NI-1230-4LS2L
    Tape & Reel (TR)
    2006
    Active
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.5GHz
    40
    225°C
    Single
    700mA
    N-CHANNEL
    LDMOS
    14.1dB
    50W
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    -
  • AFT26P100-4WGSR3
    10 Weeks
    -
    Tape & Reel (TR)
    2006
    Not For New Designs
    Not Applicable
    EAR99
    -
    8541.29.00.75
    -
    260
    -
    40
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
  • AFT23S160W02SR3
    10 Weeks
    NI-780S
    Tape & Reel (TR)
    2013
    Not For New Designs
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.4GHz
    40
    125°C
    Single
    1.1A
    N-CHANNEL
    LDMOS
    17.9dB
    45W
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
  • AFT21H350W03SR6
    10 Weeks
    NI-1230S
    Tape & Reel (TR)
    2006
    Not For New Designs
    Not Applicable
    EAR99
    65V
    8541.29.00.40
    FET General Purpose Power
    260
    2.11GHz
    40
    125°C
    Single
    750mA
    N-CHANNEL
    LDMOS
    16.4dB
    63W
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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