NXP USA Inc. AFT21S230-12SR3
- Part Number:
- AFT21S230-12SR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3813628-AFT21S230-12SR3
- Description:
- FET RF 65V 2.11GHZ NI780-2L2L
- Datasheet:
- AFT21S230-12SR3
NXP USA Inc. AFT21S230-12SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT21S230-12SR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S
- PackagingTape & Reel (TR)
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.40
- Peak Reflow Temperature (Cel)260
- Frequency2.11GHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test1.5A
- Transistor TypeLDMOS
- Gain16.7dB
- Power - Output50W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
AFT21S230-12SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT21S230-12SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT21S230-12SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT21S230-12SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT21S230-12SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT21S230-12SR3 More Descriptions
Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1785
Trans RF MOSFET N-CH 65V 4-Pin NI-780S T/R
Power LDMOS Transistor N-Channel 65V 5-Pin T/R
RF MOSFET Transistors HV9 2.1GHZ NI780-2L2L
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1785
Trans RF MOSFET N-CH 65V 4-Pin NI-780S T/R
Power LDMOS Transistor N-Channel 65V 5-Pin T/R
RF MOSFET Transistors HV9 2.1GHZ NI780-2L2L
The three parts on the right have similar specifications to AFT21S230-12SR3.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSubcategoryOperating Temperature (Max)ConfigurationPolarity/Channel TypeFET TechnologyView Compare
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AFT21S230-12SR310 WeeksNI-780STape & Reel (TR)2013ActiveNot ApplicableEAR9965V8541.29.00.402602.11GHz401.5ALDMOS16.7dB50W28VROHS3 Compliant------
-
10 WeeksNI-780STape & Reel (TR)2013Not For New DesignsNot ApplicableEAR9965V8541.29.00.402602.4GHz401.1ALDMOS17.9dB45W28VROHS3 CompliantFET General Purpose Power125°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
-
10 WeeksNI-1230-4LS2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.402602.5GHz40700mALDMOS14.1dB50W28VROHS3 CompliantFET General Purpose Power225°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
-
10 WeeksNI-1230STape & Reel (TR)2006Not For New DesignsNot ApplicableEAR9965V8541.29.00.402602.11GHz40750mALDMOS16.4dB63W28VROHS3 CompliantFET General Purpose Power125°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
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