NXP USA Inc. AFT26P100-4WGSR3

Name: AFT26P100-4WGSR3
Brand: NXP USA Inc.
SKU: 2848088-AFT26P100-4WGSR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT26P100-4WGSR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2848088-AFT26P100-4WGSR3

Description:: TRANS RF 2.6GHZ 100W NI780S-6

ECAD Model:

Datasheet:: AFT26P100-4WGSR3

Specifications

NXP USA Inc. AFT26P100-4WGSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT26P100-4WGSR3.

Factory Lead Time
10 Weeks
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
RoHS Status
ROHS3 Compliant

Description

AFT26P100-4WGSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT26P100-4WGSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT26P100-4WGSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT26P100-4WGSR3 More Descriptions

Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 22 W Avg., 28 V, CFM4, RoHSNXP Semiconductors SCT
Transistor RF FET N-CH 65V 2496MHz to 2690MHz 4-Pin NI-780GS T/R
RF Power Transistor,2496 to 2690 MHz, 87 W, Typ Gain in dB is 15.3 @ 2690 MHz, 28 V, LDMOS, SOT1805
RF MOSFET 2.6GHZ 100W NI780S-6

Product Comparison

The three parts on the right have similar specifications to AFT26P100-4WGSR3.

Image

Part Number

Manufacturer

Factory Lead Time

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

RoHS Status

Package / Case

Voltage - Rated

Subcategory

Frequency

Operating Temperature (Max)

Configuration

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Voltage - Test

View Compare
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

8541.29.00.75

260

40

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

8541.29.00.40

260

40

ROHS3 Compliant

NI-780S

65V

FET General Purpose Power

2.4GHz

125°C

Single

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

AFT26P100-4WGSR3 vs AFT23S160W02SR3
AFT26H250-24SR6

NXP USA Inc.

10 Weeks

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

8541.29.00.40

260

40

ROHS3 Compliant

NI-1230-4LS2L

65V

FET General Purpose Power

2.5GHz

225°C

Single

700mA

N-CHANNEL

LDMOS

14.1dB

50W

METAL-OXIDE SEMICONDUCTOR

28V

AFT26P100-4WGSR3 vs AFT26H250-24SR6
AFT21H350W03SR6

NXP USA Inc.

10 Weeks

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

8541.29.00.40

260

40

ROHS3 Compliant

NI-1230S

65V

FET General Purpose Power

2.11GHz

125°C

Single

750mA

N-CHANNEL

LDMOS

16.4dB

63W

METAL-OXIDE SEMICONDUCTOR

28V

AFT26P100-4WGSR3 vs AFT21H350W03SR6