2N6768T1

Microsemi Corporation 2N6768T1

Part Number:
2N6768T1
Manufacturer:
Microsemi Corporation
Ventron No:
3586855-2N6768T1
Description:
MOSFET N-CH 400V 14A TO-254AA
ECAD Model:
Datasheet:
2N6768T1

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Specifications
Microsemi Corporation 2N6768T1 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6768T1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-254-3, TO-254AA (Straight Leads)
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    PIN/PEG
  • Pin Count
    3
  • JESD-30 Code
    S-XSFM-P3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    4W Ta 150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    400m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    14A
  • Drain-source On Resistance-Max
    0.3Ohm
  • DS Breakdown Voltage-Min
    400V
  • RoHS Status
    Non-RoHS Compliant
Description
2N6768T1 Overview
This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

2N6768T1 Features
a continuous drain current (ID) of 14A
a 400V drain to source voltage (Vdss)


2N6768T1 Applications
There are a lot of Microsemi Corporation
2N6768T1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
2N6768T1 More Descriptions
MOSFET N-CH 400V 14A TO-254AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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