Microsemi Corporation 2N6193

Name: 2N6193
Brand: Microsemi Corporation
SKU: 3585351-2N6193
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N6193

Manufacturer:: Microsemi Corporation

Ventron No:: 3585351-2N6193

Description:: TRANS PNP 100V 5A TO-39

ECAD Model:

Datasheet:: 2N6193

Specifications

Microsemi Corporation 2N6193 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6193.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 500mA, 5A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
Turn Off Time-Max (toff)
2020ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N6193 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.

2N6193 Features
the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V

2N6193 Applications
There are a lot of Microsemi Corporation
2N6193 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N6193 More Descriptions

Trans GP BJT PNP 100V 5A 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip 2N6193
PNP TRANSISTOR, TO-39, LAW

Product Comparison

The three parts on the right have similar specifications to 2N6193.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Radiation Hardening

RoHS Status

Contact Plating

Surface Mount

Weight

Additional Feature

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Element Configuration

Case Connection

Gain Bandwidth Product

JEDEC-95 Code

Transition Frequency

Collector Emitter Saturation Voltage

hFE Min

Height

Length

Width

REACH SVHC

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Collector-Base Capacitance-Max

View Compare
2N6193

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

12 Weeks

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

2002

e0

no

Active

1 (Unlimited)

3

EAR99

TIN LEAD

Other Transistors

1W

BOTTOM

WIRE

3

1

SINGLE

1W

SWITCHING

PNP

PNP

100V

5A

60 @ 2A 2V

100μA

1.2V @ 500mA, 5A

100V

100V

6V

2020ns

200ns

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N6109G

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

2 Weeks

-

Through Hole

TO-220-3

3

SILICON

-65°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

40W

-

-

3

1

-

40W

SWITCHING

PNP

PNP

50V

7A

30 @ 2.5A 4V

1mA

3.5V @ 3A, 7A

50V

60V

5V

-

-

No

ROHS3 Compliant

Tin

NO

4.535924g

LEADFORM OPTIONS ARE AVAILABLE

-50V

260

7A

10MHz

40

2N6109

Single

COLLECTOR

10MHz

TO-220AB

10MHz

3.5V

30

15.75mm

10.28mm

4.82mm

No SVHC

Lead Free

-

-

-

-

-

-

2N6193 vs 2N6109G
2N6109

ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-65°C~150°C TJ

Tube

-

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

30 @ 2.5A 4V

1mA

3.5V @ 3A, 7A

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220AB

40W

50V

7A

10MHz

-

2N6193 vs 2N6109
2N6111

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

-

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

40W

-

-

3

1

-

40W

SWITCHING

PNP

PNP

30V

7A

30 @ 3A 4V

1mA

3.5V @ 3A, 7A

30V

40V

5V

-

-

No

ROHS3 Compliant

Tin

-

4.535924g

-

-40V

-

-7A

4MHz

-

2N61

Single

-

4MHz

TO-220AB

4MHz

-1V

23

15.75mm

10.4mm

4.6mm

No SVHC

Lead Free

-

-

-

-

-

250pF

2N6193 vs 2N6111