2N6107G
- Part Number:
- 2N6107G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068784-2N6107G
- Description:
- TRANS PNP 70V 7A TO220AB
- Datasheet:
- 2N6107G
ON Semiconductor 2N6107G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6107G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC-70V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating-7A
- Frequency10MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6107
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current7A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A 4V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
- Collector Emitter Breakdown Voltage70V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage3.5V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
- Description
- FAQs
- Shipping
2N6107G Overview
DC current gain in this device equals 30 @ 2A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 7A volts.
2N6107G Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6107G Applications
There are a lot of ON Semiconductor
2N6107G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 30 @ 2A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 7A volts.
2N6107G Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6107G Applications
There are a lot of ON Semiconductor
2N6107G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6107G More Descriptions
ON Semi 2N6107G PNP Bipolar Transistor, 10 A, 70 V, 4-Pin TO-220AB | ON Semiconductor 2N6107G
Trans GP BJT PNP 70V 7A 40000mW 3-Pin(3 Tab) TO-220AB Tube
2N Series 70 V 7 A PNP Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 70 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BJT transistor,PNP,7A,70V,TO220AB, TU
Power Transistor, Pnp, -70V, To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:70V; Dc Collector Current:7A; Power Dissipation Pd:40W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Dc Current Gain Hfe:4Hfe Rohs Compliant: Yes
TRANS, BIPOL, PNP, -70V, TO-220-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -70V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: -7A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Trans GP BJT PNP 70V 7A 40000mW 3-Pin(3 Tab) TO-220AB Tube
2N Series 70 V 7 A PNP Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 70 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BJT transistor,PNP,7A,70V,TO220AB, TU
Power Transistor, Pnp, -70V, To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:70V; Dc Collector Current:7A; Power Dissipation Pd:40W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Dc Current Gain Hfe:4Hfe Rohs Compliant: Yes
TRANS, BIPOL, PNP, -70V, TO-220-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -70V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: -7A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to 2N6107G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):MountCollector-Base Capacitance-MaxSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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2N6107GACTIVE (Last Updated: 1 day ago)5 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors-70V40W260-7A10MHz402N610731Single40WCOLLECTORSWITCHING10MHzPNPPNP70V7A30 @ 2A 4V1mATO-220AB3.5V @ 3A, 7A70V10MHz3.5V80V5V3015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free-------------------------
-
-------------------------------------------------------30V3.5V @ 3A, 7APNPTO-220AB-40WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole10MHz30 @ 3A, 4V1mA7A----------
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--TinThrough HoleTO-220-3-34.535924gSILICON150°C TJTube-e3yesObsolete1 (Unlimited)3EAR99-Other Transistors-40V40W--7A4MHz-2N6131Single40W-SWITCHING4MHzPNPPNP30V7A30 @ 3A 4V1mATO-220AB3.5V @ 3A, 7A30V4MHz-1V40V5V2315.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------------Through Hole250pF--------
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OBSOLETE (Last Updated: 1 day ago)-Lead, TinThrough HoleTO-220-3-3---65°C~150°C TJTube2007--Obsolete1 (Unlimited)-----70V40W--7A--2N6107--Single40W--10MHz-PNP70V7A30 @ 2A 4V1mA-3.5V @ 3A, 7A70V-3.5V80V5V30-----Non-RoHS CompliantLead Free----------------TO-220AB150°C-65°CPNP40W70V7A10MHz
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