ON Semiconductor 2N6109

Name: 2N6109
Brand: ON Semiconductor
SKU: 2466794-2N6109
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N6109

Manufacturer:: ON Semiconductor

Ventron No:: 2466794-2N6109

Description:: TRANS PNP 50V 7A TO220AB

ECAD Model:

Datasheet:: 2N6109

Specifications

ON Semiconductor 2N6109 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6109.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
40W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2.5A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
7A
Frequency - Transition
10MHz
RoHS Status
Non-RoHS Compliant

Description

2N6109 Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3.5V @ 3A, 7A.Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 50V.

2N6109 Features
the DC current gain for this device is 30 @ 2.5A 4V
the vce saturation(Max) is 3.5V @ 3A, 7A
the supplier device package of TO-220AB

2N6109 Applications
There are a lot of Rochester Electronics, LLC
2N6109 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N6109 More Descriptions

Electronics 2N6109 Transistor PNP Silicon BVceo=50V IC=7A TO-220 Case Purpose lifier And Switch
T-PNP SI-GEN PUR AMP SWNTE Electronics
TRANS PNP 50V 7A TO220

Product Comparison

The three parts on the right have similar specifications to 2N6109.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Surface Mount

Number of Pins

Weight

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Mount

Collector-Base Capacitance-Max

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Terminal Position

JESD-30 Code

Qualification Status

Polarity

Configuration

Power Dissipation-Max

DC Current Gain-Min (hFE)

Continuous Collector Current

View Compare
2N6109

ON Semiconductor

Through Hole

TO-220-3

TO-220AB

-65°C~150°C TJ

Tube

Obsolete

3 (168 Hours)

40W

PNP

30 @ 2.5A 4V

1mA

3.5V @ 3A, 7A

50V

7A

10MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N6107G

ON Semiconductor

Through Hole

TO-220-3

-

-65°C~150°C TJ

Tube

Active

1 (Unlimited)

-

PNP

30 @ 2A 4V

1mA

3.5V @ 3A, 7A

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

5 Weeks

Tin

NO

3

4.535924g

SILICON

2006

e3

yes

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

-70V

40W

260

-7A

10MHz

40

2N6107

3

1

Single

40W

COLLECTOR

SWITCHING

10MHz

PNP

70V

7A

TO-220AB

70V

10MHz

3.5V

80V

5V

30

15.748mm

10.2616mm

4.826mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

2N6109 vs 2N6107G
2N6111

STMicroelectronics

Through Hole

TO-220-3

-

150°C TJ

Tube

Obsolete

1 (Unlimited)

-

PNP

30 @ 3A 4V

1mA

3.5V @ 3A, 7A

-

-

-

ROHS3 Compliant

-

-

Tin

-

3

4.535924g

SILICON

-

e3

yes

3

EAR99

-

Other Transistors

-40V

40W

-

-7A

4MHz

-

2N61

3

1

Single

40W

-

SWITCHING

4MHz

PNP

30V

7A

TO-220AB

30V

4MHz

-1V

40V

5V

23

15.75mm

10.4mm

4.6mm

No SVHC

No

Lead Free

Through Hole

250pF

-

-

-

-

-

-

-

-

-

-

-

2N6109 vs 2N6111
2N6123

Central Semiconductor Corp

-

TO-220

-

-

-

Active

-

-

-

-

-

-

-

-

2.5MHz

RoHS Compliant

-

12 Weeks

-

-

-

-

-

2001

e0

no

3

EAR99

-

Other Transistors

-

-

NOT SPECIFIED

-

2.5MHz

NOT SPECIFIED

-

3

1

-

40W

COLLECTOR

SWITCHING

2.5MHz

-

80V

4A

-

80V

2.5MHz

1.4V

80V

5V

20

-

-

-

-

-

Lead Free

Through Hole

-

Tin/Lead (Sn/Pb)

150°C

-65°C

SINGLE

R-PSFM-T3

Not Qualified

NPN

SINGLE

40W

20

450mA

2N6109 vs 2N6123