Central Semiconductor Corp 2N6107
- Part Number:
- 2N6107
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2464788-2N6107
- Description:
- TRANS PNP 70V 7A TO-220
- Datasheet:
- 2N6107
Central Semiconductor Corp 2N6107 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N6107.
- Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
- Contact PlatingLead, Tin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC-70V
- Max Power Dissipation40W
- Current Rating-7A
- Base Part Number2N6107
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation40W
- Power - Max40W
- Gain Bandwidth Product10MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current7A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
- Collector Emitter Breakdown Voltage70V
- Voltage - Collector Emitter Breakdown (Max)70V
- Current - Collector (Ic) (Max)7A
- Collector Emitter Saturation Voltage3.5V
- Frequency - Transition10MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
2N6107 Overview
DC current gain in this device equals 30 @ 2A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.Product comes in TO-220AB supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 7A volts.
2N6107 Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
the supplier device package of TO-220AB
2N6107 Applications
There are a lot of ON Semiconductor
2N6107 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 30 @ 2A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.Product comes in TO-220AB supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 7A volts.
2N6107 Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
the supplier device package of TO-220AB
2N6107 Applications
There are a lot of ON Semiconductor
2N6107 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6107 More Descriptions
Transistor GP BJT PNP 70V 7A 3-Pin TO-220Avnet Japan
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-70V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Current:-7A;
Bipolar Transistor, Pnp, -70V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:70V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:10Mhz; Msl:-Rohs Compliant: Yes |Multicomp Pro 2N6107
BIPOLAR TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -70V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: -7A; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 3.5V; Current Ic Continuous a Max: 7A; Gain Bandwidth ft Typ: 10MHz; Hfe Min: 2.3; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-70V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Current:-7A;
Bipolar Transistor, Pnp, -70V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:70V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:10Mhz; Msl:-Rohs Compliant: Yes |Multicomp Pro 2N6107
BIPOLAR TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -70V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: -7A; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 3.5V; Current Ic Continuous a Max: 7A; Gain Bandwidth ft Typ: 10MHz; Hfe Min: 2.3; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole
The three parts on the right have similar specifications to 2N6107.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):MountWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryFrequencyPin CountNumber of ElementsTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyCollector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRadiation HardeningFactory Lead TimeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower Dissipation-MaxCase ConnectionDC Current Gain-Min (hFE)Continuous Collector CurrentView Compare
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2N6107OBSOLETE (Last Updated: 1 day ago)Lead, TinThrough HoleTO-220-33TO-220AB-65°C~150°C TJTube2007Obsolete1 (Unlimited)150°C-65°C-70V40W-7A2N6107PNPSingle40W40W10MHzPNP70V7A30 @ 2A 4V1mA3.5V @ 3A, 7A70V70V7A3.5V10MHz80V5V30Non-RoHS CompliantLead Free------------------------------------------------
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--------------------------------------30V3.5V @ 3A, 7APNPTO-220AB-40WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole10MHz30 @ 3A, 4V1mA7A---------------------------------
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-TinThrough HoleTO-220-33-150°C TJTube-Obsolete1 (Unlimited)---40V40W-7A2N61-Single40W-4MHzPNP30V7A30 @ 3A 4V1mA3.5V @ 3A, 7A30V---1V-40V5V23ROHS3 CompliantLead Free--------------Through Hole4.535924gSILICONe3yes3EAR99Other Transistors4MHz31SWITCHINGPNPTO-220AB4MHz250pF15.75mm10.4mm4.6mmNo SVHCNo------------
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---TO-220----2001Active-150°C-65°C----NPN-40W-2.5MHz-80V4A---80V--1.4V2.5MHz80V5V20RoHS CompliantLead Free--------------Through Hole--e0no3EAR99Other Transistors2.5MHz31SWITCHING--2.5MHz------12 WeeksTin/Lead (Sn/Pb)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE40WCOLLECTOR20450mA
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