ON Semiconductor 2N6109G

Name: 2N6109G
Brand: ON Semiconductor
SKU: 2845212-2N6109G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N6109G

Manufacturer:: ON Semiconductor

Ventron No:: 2845212-2N6109G

Description:: TRANS PNP 50V 7A TO220AB

ECAD Model:

Datasheet:: 2N6109G

Specifications

ON Semiconductor 2N6109G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6109G.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
7A
Frequency
10MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
2N6109
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2.5A 4V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
3.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
15.75mm
Length
10.28mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.

2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz

2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N6109G More Descriptions

Bipolar junction transistor, PNP, -7 A, -50 V, THT, TO-220, 2N6109G
ON Semi 2N6109G PNP Bipolar Transistor, 7 A, 50 V, 4-Pin TO-220AB
Trans GP BJT PNP 50V 7A 40000mW 3-Pin(3 Tab) TO-220AB Tube
2N Series 50 V 7 A PNP Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 50V PNP Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
50V 40W 7A 30@2.5A4V 10MHz 3.5V@7A3A PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

Product Comparison

The three parts on the right have similar specifications to 2N6109G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Finish

Terminal Position

Terminal Form

Configuration

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Collector-Base Capacitance-Max

View Compare
2N6109G

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

2 Weeks

Tin

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

-50V

40W

260

7A

10MHz

40

2N6109

3

1

Single

40W

COLLECTOR

SWITCHING

10MHz

PNP

PNP

50V

7A

30 @ 2.5A 4V

1mA

TO-220AB

3.5V @ 3A, 7A

50V

10MHz

3.5V

60V

5V

30

15.75mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N6193

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

12 Weeks

-

Through Hole

TO-205AD, TO-39-3 Metal Can

-

3

-

SILICON

-65°C~200°C TJ

Bulk

2002

e0

no

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-

1W

-

-

-

-

-

3

1

-

1W

-

SWITCHING

-

PNP

PNP

100V

5A

60 @ 2A 2V

100μA

-

1.2V @ 500mA, 5A

100V

-

-

100V

6V

-

-

-

-

-

No

Non-RoHS Compliant

-

Through Hole

TIN LEAD

BOTTOM

WIRE

SINGLE

2020ns

200ns

-

-

-

-

-

-

2N6109G vs 2N6193
2N6109

ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-

-65°C~150°C TJ

Tube

-

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

30 @ 2.5A 4V

1mA

-

3.5V @ 3A, 7A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

TO-220AB

40W

50V

7A

10MHz

-

2N6109G vs 2N6109
2N6111

STMicroelectronics

-

-

Tin

Through Hole

TO-220-3

-

3

4.535924g

SILICON

150°C TJ

Tube

-

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

-40V

40W

-

-7A

4MHz

-

2N61

3

1

Single

40W

-

SWITCHING

4MHz

PNP

PNP

30V

7A

30 @ 3A 4V

1mA

TO-220AB

3.5V @ 3A, 7A

30V

4MHz

-1V

40V

5V

23

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

Through Hole

-

-

-

-

-

-

-

-

-

-

-

250pF

2N6109G vs 2N6111

Certification

Related parts for 2N6109G

2N6109

Central Semiconductor Corp

TRANS PNP 50V 7A TO-220
2N6193

Microsemi Corporation

TRANS PNP 100V 5A TO-39
2N6111

ON Semiconductor

TRANS PNP 30V 7A TO220AB
2N6107G

ON Semiconductor

TRANS PNP 70V 7A TO220AB
2N6109G

ON Semiconductor

TRANS PNP 50V 7A TO220AB
2N6109

ON Semiconductor

TRANS PNP 50V 7A TO220AB
2N6111

STMicroelectronics

TRANS PNP 30V 7A TO-220
2N6107

Central Semiconductor Corp

TRANS PNP 70V 7A TO-220
2N6123

Central Semiconductor Corp

TRANS NPN 80V 4A TO-220

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2N6109G Specification

Part Number	Manufacturers	Description	Stock	Price
2N6109G DISTI #V36:1790_07297836	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Tube RoHS: Compliant	3050	1 $0.767 10 $0.6675 100 $0.4299 1000 $0.3474 2500 $0.3076 10000 $0.2974 25000 $0.2906
2N6109G DISTI #V99:2348_07297836	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Tube RoHS: Compliant	1194	1 $0.767 10 $0.6675 100 $0.4299 1000 $0.3474 2500 $0.3177
2N6109G DISTI #2N6109GOS-ND	ON Semiconductor	TRANS PNP 50V 7A TO220AB RoHS: Compliant	616	1 $0.92 10 $0.813 50 $0.7636 100 $0.6232 500 $0.49266 2500 $0.35718 5000 $0.33255
2N6109G DISTI #25632626	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Tube RoHS: Compliant	9000	1500 $0.2978
2N6109G DISTI #32427021	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Tube RoHS: Compliant	3050	21 $0.6534 100 $0.4626 1000 $0.3738 2500 $0.331 10000 $0.3198 25000 $0.3124
2N6109G DISTI #27475989	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Tube RoHS: Compliant	1194	20 $0.6534 100 $0.4626 1000 $0.3738 2500 $0.3415
2N6109G DISTI #2N6109G	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Rail RoHS: Compliant	1650	50 $0.4619 100 $0.3779 200 $0.3459 300 $0.3199 500 $0.2969
2N6109G DISTI #2N6109G	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Rail RoHS: Compliant	1388	50 $0.30667 100 $0.30468 150 $0.30077 250 $0.29696 500 $0.28963
2N6109G DISTI #2N6109G	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Rail RoHS: Compliant	0	962 $0.3389 1924 $0.3369 2886 $0.3329 4810 $0.3289 9620 $0.3199
2N6109G DISTI #26K5314	ON Semiconductor	Trans GP BJT PNP 50V 7A 3-Pin(3 Tab) TO-220AB Rail RoHS: Compliant	0	1 $0.91 10 $0.758 100 $0.5 500 $0.453 1000 $0.406 2500 $0.347 10000 $0.335
2N6109G DISTI #26K5314	ON Semiconductor	POWER TRANSISTOR, PNP, -50V, TO-220, Transistor P	522	1 $0.91 10 $0.758 100 $0.5 500 $0.453 1000 $0.406 2500 $0.347 10000 $0.335
2N6109G DISTI #82Y7716	ON Semiconductor	TRANSISTOR, BIPOL, PNP, 50V, TO-220-3, Transistor	0	1 $0.918 10 $0.763 100 $0.501 500 $0.454 1000 $0.406 2500 $0.346 10000 $0.334
2N6109G. DISTI #28AC7853	ON Semiconductor	BIP T0220 PNP 7A 50V ROHS COMPLIANT: YES	0	1 $0.929 10 $0.774 100 $0.51 500 $0.453 1000 $0.406 2500 $0.347 10000 $0.335
2N6109G DISTI #70099780	ON Semiconductor	ON Semi 2N6109G PNP Bipolar Transistor, 7 A, 50 RoHS: Compliant	0	5 $0.35 10 $0.34 25 $0.33
2N6109G DISTI #863-2N6109G	ON Semiconductor	Bipolar Transistors - BJT 7A 50V 40W PNP RoHS: Compliant	1582	1 $0.88 10 $0.728 100 $0.47 1000 $0.376
2N6109G DISTI #	ON Semiconductor	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1 RoHS: Compliant	1389	1 $0.42 25 $0.39 100 $0.38 500 $0.36 1000 $0.34
NJV2N6109G DISTI #	ON Semiconductor	BIP T0-220 PNP 7A 50V RoHS: Not Compliant	8122	1 $0.28 25 $0.26 100 $0.25 500 $0.24 1000 $0.22
2N6109G DISTI #	ON Semiconductor	* FREE SHIPPING ORDERS OVER $100 *	1960	1 $1.1 110 $0.33 607 $0.286
2N6109G DISTI #7743445P	ON Semiconductor	TRANSISTOR PNP 50V 7A 40W TO220AB, TU	750	100 $0.346
2N6109G DISTI #7743445	ON Semiconductor	TRANSISTOR PNP 50V 7A 40W TO220AB, PK	155	5 $0.65 100 $0.346
2N6109G DISTI #	ON Semiconductor		2450	7 $0.825 26 $0.5363 95 $0.3094 325 $0.264 702 $0.231 1668 $0.2145
2N6109G DISTI #	ON Semiconductor		34
2N6109G DISTI #2535603	ON Semiconductor	TRANSISTOR, BIPOL, PNP, 50V, TO-220-3 RoHS: Compliant	14	1 $1.36 10 $1.13 100 $0.723 1000 $0.579
2N6109G. DISTI #1126038	ON Semiconductor	POWER TRANSISTOR, PNP, -50V, TO-220 RoHS: Compliant	522	1 $1.36 10 $1.13 100 $0.723 1000 $0.579
2N6109G DISTI #2535603	ON Semiconductor	TRANSISTOR, BIPOL, PNP, 50V, TO-220-3 RoHS: Compliant	14	5 $0.643 25 $0.579 100 $0.369 250 $0.345 500 $0.32

ON Semiconductor 2N6109G

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