Cypress Semiconductor Corp S70GL02GT11FHB020
- Part Number:
- S70GL02GT11FHB020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7373864-S70GL02GT11FHB020
- Description:
- GL-T Memory IC GL-T Series 13mm mm
- Datasheet:
- S70GL02GT11FHB020
Cypress Semiconductor Corp S70GL02GT11FHB020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GT11FHB020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Screening LevelAEC-Q100
- Programming Voltage3V
- Alternate Memory Width8
- Length13mm
- Height Seated (Max)1.4mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GT11FHB020 Overview
There is a Non-Volatile memory type associated with this device. Tray-cases are available. There is a 64-LBGA case embedded in it. 2Gb 256M x 8 128M x 16 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 64 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. Its target applications rely heavily on the GL-T series memory devices. It is necessary to apply 3V programming voltage to certain nonvolatile memory arrays in order to change their state.
S70GL02GT11FHB020 Features
Package / Case: 64-LBGA
S70GL02GT11FHB020 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT11FHB020 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Non-Volatile memory type associated with this device. Tray-cases are available. There is a 64-LBGA case embedded in it. 2Gb 256M x 8 128M x 16 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 64 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. Its target applications rely heavily on the GL-T series memory devices. It is necessary to apply 3V programming voltage to certain nonvolatile memory arrays in order to change their state.
S70GL02GT11FHB020 Features
Package / Case: 64-LBGA
S70GL02GT11FHB020 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT11FHB020 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
S70GL02GT11FHB020 More Descriptions
NOR Flash 2Gb 512M X 4Bit/1024M X 2Bit/2048M X 1Bit 110ns 64-Pin FBGA Tray
IC FLASH 2GBIT PARALLEL 64FBGA
S70GL02GT - 2 Gbit (256 MBytes),
IC FLASH 2GBIT PARALLEL 64FBGA
S70GL02GT - 2 Gbit (256 MBytes),
The three parts on the right have similar specifications to S70GL02GT11FHB020.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusHTS CodeView Compare
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S70GL02GT11FHB02013 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayGL-TActive3 (168 Hours)64FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bitAEC-Q1003V813mm1.4mm11mmROHS3 Compliant--
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)GL-TActive3 (168 Hours)64FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bitAEC-Q1003V813mm1.4mm11mmROHS3 Compliant-
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)GL-TActive3 (168 Hours)64FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bitAEC-Q1003V813mm1.4mm11mmROHS3 Compliant8542.32.00.51
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13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayGL-TActive3 (168 Hours)64FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit-3V813mm1.4mm11mmROHS3 Compliant-
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