Cypress Semiconductor Corp S70GL02GS12FHBV20
- Part Number:
- S70GL02GS12FHBV20
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7373850-S70GL02GS12FHBV20
- Description:
- Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 13mm mm
- Datasheet:
- S70GL02GS12FHBV20
Cypress Semiconductor Corp S70GL02GS12FHBV20 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GS12FHBV20.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- SeriesAutomotive, AEC-Q100, GL-S
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.71
- TechnologyFLASH - NOR
- Voltage - Supply1.65V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Programming Voltage3V
- Alternate Memory Width8
- Length13mm
- Height Seated (Max)1.4mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GS12FHBV20 Overview
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 64-LBGA case, memory ics is a single file. On the chip, there is an 2Gb 128M x 16 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~105°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.65V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 64 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. It is an important component of the Automotive, AEC-Q100, GL-S series memory devices used in a variety of applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S70GL02GS12FHBV20 Features
Package / Case: 64-LBGA
S70GL02GS12FHBV20 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GS12FHBV20 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 64-LBGA case, memory ics is a single file. On the chip, there is an 2Gb 128M x 16 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~105°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.65V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 64 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. It is an important component of the Automotive, AEC-Q100, GL-S series memory devices used in a variety of applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S70GL02GS12FHBV20 Features
Package / Case: 64-LBGA
S70GL02GS12FHBV20 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GS12FHBV20 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
S70GL02GS12FHBV20 More Descriptions
Parallel NOR Flash Memory, 2048 Mbit Density, 120 ns Initial Access Time, MCP-64, RoHSCypress Semiconductor SCT
NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 120ns Automotive 64-Pin Fortified BGA Tray
IC FLASH 2GBIT PARALLEL 64FBGA
DFN 6.00X5.00X0.75 MM, 1.27MM PI
NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 120ns Automotive 64-Pin Fortified BGA Tray
IC FLASH 2GBIT PARALLEL 64FBGA
DFN 6.00X5.00X0.75 MM, 1.27MM PI
The three parts on the right have similar specifications to S70GL02GS12FHBV20.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusScreening LevelView Compare
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S70GL02GS12FHBV2013 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-SActive3 (168 Hours)648542.32.00.71FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant--
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 CompliantAEC-Q100
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant-
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayGL-TActive3 (168 Hours)64-FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant-
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