Cypress Semiconductor Corp S70GL02GS12FHBV23
- Part Number:
- S70GL02GS12FHBV23
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7373856-S70GL02GS12FHBV23
- Description:
- Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 13mm mm
- Datasheet:
- S70GL02GS12FHBV23
Cypress Semiconductor Corp S70GL02GS12FHBV23 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GS12FHBV23.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q100, GL-S
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.71
- TechnologyFLASH - NOR
- Voltage - Supply1.65V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Programming Voltage3V
- Alternate Memory Width8
- Length13mm
- Height Seated (Max)1.4mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GS12FHBV23 Overview
Its memory type can be classified as Non-Volatile. It is supplied votage within Tape & Reel (TR). It is available in 64-LBGA case. The memory size of the chip is 2Gb 128M x 16 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.65V~3.6V. Its recommended mounting type is Surface Mount. 64 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. As a member of the Automotive, AEC-Q100, GL-S series memory devices, this part plays an important role for its target applications. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.
S70GL02GS12FHBV23 Features
Package / Case: 64-LBGA
S70GL02GS12FHBV23 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GS12FHBV23 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Non-Volatile. It is supplied votage within Tape & Reel (TR). It is available in 64-LBGA case. The memory size of the chip is 2Gb 128M x 16 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.65V~3.6V. Its recommended mounting type is Surface Mount. 64 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. As a member of the Automotive, AEC-Q100, GL-S series memory devices, this part plays an important role for its target applications. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.
S70GL02GS12FHBV23 Features
Package / Case: 64-LBGA
S70GL02GS12FHBV23 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GS12FHBV23 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
S70GL02GS12FHBV23 More Descriptions
Parallel NOR Flash Memory, 2048 Mbit Density, 120 ns Initial Access Time, MCP-64, RoHSCypress Semiconductor SCT
FLASH - NOR Memory IC 2Gb (128M x 16) Parallel 120 ns 64-FBGA (13x11)
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
FLASH - NOR Memory IC 2Gb (128M x 16) Parallel 120 ns 64-FBGA (13x11)
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
The three parts on the right have similar specifications to S70GL02GS12FHBV23.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusScreening LevelView Compare
-
S70GL02GS12FHBV2313 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100, GL-SActive3 (168 Hours)648542.32.00.71FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant--
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.71FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant-
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 CompliantAEC-Q100
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayGL-TActive3 (168 Hours)64-FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
23 January 2024
IRF3205 MOSFET Specifications, Package, Working Principle and Applications
Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ.... -
23 January 2024
Get to Know the TDA2822M Audio Amplifier
Ⅰ. What is TDA2822M?Ⅱ. What are the features of TDA2822M?Ⅲ. Specifications of TDA2822MⅣ. Structure and working principle of TDA2822MⅤ. TDA2822M schematic diagramⅥ. What are the applications of TDA2822M?Ⅶ.... -
24 January 2024
ESP8266 Characteristics, Structure, Application Fields and Other Details
Ⅰ. What is ESP8266?Ⅱ. Characteristics of ESP8266 moduleⅢ. Hardware interface of ESP8266Ⅳ. Development method of ESP8266Ⅴ. Structure of ESP8266Ⅵ. What are the working modes of ESP8266?Ⅶ. What are... -
24 January 2024
ULN2803A Darlington Transistor Specifications, Characteristics, Working Principle and More
Ⅰ. Overview of ULN2803AⅡ. Specifications of ULN2803AⅢ. Characteristics of ULN2803AⅣ. Schematic diagram of ULN2803AⅤ. How does ULN2803A work?Ⅵ. Where is ULN2803A used?Ⅶ. Application circuit of ULN2803AⅧ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.