Cypress Semiconductor Corp S70GL02GT11FHB013
- Part Number:
- S70GL02GT11FHB013
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7373852-S70GL02GT11FHB013
- Description:
- Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
- ECAD Model:
-
- Datasheet:
- S70GL02GT11FHB013
Cypress Semiconductor Corp S70GL02GT11FHB013 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GT11FHB013.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q100, GL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.71
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Programming Voltage3V
- Alternate Memory Width8
- Length13mm
- Height Seated (Max)1.4mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GT11FHB013 Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 64-LBGA case contains it. The chip has an 2Gb 256M x 8 128M x 16 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 64 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3V of power. In its target applications, this memory ics plays an important role as a member of the Automotive, AEC-Q100, GL-T series of memory devices. Nonvolatile memory arrays require 3V programming voltage to change their state.
S70GL02GT11FHB013 Features
Package / Case: 64-LBGA
S70GL02GT11FHB013 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT11FHB013 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 64-LBGA case contains it. The chip has an 2Gb 256M x 8 128M x 16 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 64 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3V of power. In its target applications, this memory ics plays an important role as a member of the Automotive, AEC-Q100, GL-T series of memory devices. Nonvolatile memory arrays require 3V programming voltage to change their state.
S70GL02GT11FHB013 Features
Package / Case: 64-LBGA
S70GL02GT11FHB013 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT11FHB013 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
S70GL02GT11FHB013 More Descriptions
2 Gbit Parallel 110 ns Surface Mount FLASH NOR Memory IC - FBGA-64 (11x13)
NOR Flash 2Gb 512M X 4Bit/1024M X 2Bit/2048M X 1Bit 110ns 64-Pin FBGA T/R
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
Nor/Reel Rohs Compliant: Yes |Infineon S70GL02GT11FHB013
NOR Flash 2Gb 512M X 4Bit/1024M X 2Bit/2048M X 1Bit 110ns 64-Pin FBGA T/R
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
Nor/Reel Rohs Compliant: Yes |Infineon S70GL02GT11FHB013
The three parts on the right have similar specifications to S70GL02GT11FHB013.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusView Compare
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S70GL02GT11FHB01313 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.71FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant- -
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-SActive3 (168 Hours)648542.32.00.71FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
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13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
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13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
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Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 13mm mm
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Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
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Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 13mm mm
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Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
-
Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
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Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
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