Cypress Semiconductor Corp S70GL02GT12FHAV13
- Part Number:
- S70GL02GT12FHAV13
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7373799-S70GL02GT12FHAV13
- Description:
- Automotive, AEC-Q100, GL-T Memory IC Automotive, AEC-Q100, GL-T Series 13mm mm
- Datasheet:
- S70GL02GT12FHAV13
Cypress Semiconductor Corp S70GL02GT12FHAV13 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GT12FHAV13.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q100, GL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.65V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Programming Voltage3V
- Alternate Memory Width8
- Length13mm
- Height Seated (Max)1.4mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GT12FHAV13 Overview
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 64-LBGA case embedded in it. 2Gb 256M x 8 128M x 16 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.65V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 64 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. Its target applications rely heavily on the Automotive, AEC-Q100, GL-T series memory devices. It is necessary to apply 3V programming voltage to certain nonvolatile memory arrays in order to change their state.
S70GL02GT12FHAV13 Features
Package / Case: 64-LBGA
S70GL02GT12FHAV13 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT12FHAV13 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 64-LBGA case embedded in it. 2Gb 256M x 8 128M x 16 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.65V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 64 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. Its target applications rely heavily on the Automotive, AEC-Q100, GL-T series memory devices. It is necessary to apply 3V programming voltage to certain nonvolatile memory arrays in order to change their state.
S70GL02GT12FHAV13 Features
Package / Case: 64-LBGA
S70GL02GT12FHAV13 Applications
There are a lot of Cypress Semiconductor Corp
S70GL02GT12FHAV13 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
S70GL02GT12FHAV13 More Descriptions
FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Parallel 120 ns 64-FBGA (11x13)
Parallel NOR Flash Memory, 2048 Mbit Density, 25 ns Initial Access Time, MCP-64, RoHSCypress Semiconductor SCT
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
Parallel NOR Flash Memory, 2048 Mbit Density, 25 ns Initial Access Time, MCP-64, RoHSCypress Semiconductor SCT
2Gbit (Parallel) BGA-64 NOR FLASH ROHS
IC FLASH 2GBIT PARALLEL 64FBGA
The three parts on the right have similar specifications to S70GL02GT12FHAV13.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusView Compare
-
S70GL02GT12FHAV1313 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant-
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100, GL-SActive3 (168 Hours)648542.32.00.71FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayAutomotive, AEC-Q100, GL-SActive3 (168 Hours)648542.32.00.71FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATrayGL-TActive3 (168 Hours)64-FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bit3V813mm1.4mm11mmROHS3 Compliant
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
05 December 2023
1N4148 Small Signal Switching Diodes Symbol, Working Principle, Packages and Other Details
Ⅰ. Overview of 1N4148Ⅱ. What are the features of 1N4148 diodes?Ⅲ. Symbol, footprint and pin configuration of 1N4148 diodesⅣ. How does the 1N4148 diodes work?Ⅴ. What are the... -
05 December 2023
AMS1117 Voltage Regulator Replacements, Manufacturer, Features, Working Principle and Applications
Ⅰ. Overview of AMS1117Ⅱ. Manufacturer of AMS1117 voltage regulatorⅢ. What are the features of AMS1117 voltage regulator?Ⅳ. AMS1117 symbol, footprint and pin configurationⅤ. Structure and working principle of... -
06 December 2023
TSOP1738 Infrared Sensor Replacements, Working Principle, Advantages and Disadvantages and More
Ⅰ. Overview of TSOP1738Ⅱ. Symbol, footprint and pin configuration of TSOP1738Ⅲ. Features of TSOP1738 infrared sensorⅣ. Working principle of TSOP1738 infrared sensorⅤ. Infrared receiving circuit of TSOP1738Ⅵ. Technical... -
06 December 2023
A Complete Guide to TIP120 NPN Darlington Transistor
Ⅰ. What is a Darlington transistor?Ⅱ. Overview of TIP120Ⅲ. TIP120 symbol, footprint and pin configurationⅣ. What are the features of TIP120 Darlington transistor?Ⅴ. How does the TIP120 Darlington...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.