ON Semiconductor J175-D26Z
- Part Number:
- J175-D26Z
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 8752894-J175-D26Z
- Description:
- J175-D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Ventron
- Datasheet:
- J175-D26Z
ON Semiconductor J175-D26Z technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor J175-D26Z.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Small Signal
- Base Part NumberJ175
- Power - Max350mW
- FET TypeP-Channel
- FET TechnologyJUNCTION
- Power Dissipation-Max (Abs)0.35W
- Current - Drain (Idss) @ Vds (Vgs=0)7mA @ 15V
- Voltage - Cutoff (VGS off) @ Id3V @ 10nA
- Voltage - Breakdown (V(BR)GSS)30V
- Resistance - RDS(On)125Ohm
- RoHS StatusROHS3 Compliant
The J175-D26Z is a P-channel JFET (Junction Field Effect Transistor) manufactured by ON Semiconductor. It is a low-power, low-noise device designed for use in a variety of applications. It has a maximum drain-source voltage of 30V and a maximum power dissipation of 0.35W. The J175-D26Z is packaged in a TO-92 package, which is a small, three-pin package that is commonly used for small signal transistors.
Features of the J175-D26Z include low noise, low power consumption, and high input impedance. It also has a low gate-source capacitance, which makes it suitable for use in high-frequency applications. The J175-D26Z is also designed to be highly reliable and has a long operating life.
Applications of the J175-D26Z include audio amplifiers, signal switching, and voltage regulation. It can also be used in power management circuits, such as DC-DC converters and battery chargers. Additionally, it can be used in RF circuits, such as mixers and oscillators.
Features of the J175-D26Z include low noise, low power consumption, and high input impedance. It also has a low gate-source capacitance, which makes it suitable for use in high-frequency applications. The J175-D26Z is also designed to be highly reliable and has a long operating life.
Applications of the J175-D26Z include audio amplifiers, signal switching, and voltage regulation. It can also be used in power management circuits, such as DC-DC converters and battery chargers. Additionally, it can be used in RF circuits, such as mixers and oscillators.
J175-D26Z More Descriptions
Transistor, JFET, 30V, -60MA, TO-92-3; Breakdown Voltage Vbr:30V; Zero Gate Drain Current Idss Min:-7mA;
JFET P-Channel 30V 350mW Through Hole TO-92-3
Trans JFET P-CH 3-Pin TO-92 T/R
To-92 Jfet/Reel |Onsemi J175-D26Z
TRANSISTOR, JFET, 30V, -60MA, TO-92-3; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: -7mA; Zero Gate Voltage Drain Current Idss Max: -60mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: TO-92; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins; Operating Temperature Min: -55°C; Power Dissipation Pd: 350mW
JFET P-Channel 30V 350mW Through Hole TO-92-3
Trans JFET P-CH 3-Pin TO-92 T/R
To-92 Jfet/Reel |Onsemi J175-D26Z
TRANSISTOR, JFET, 30V, -60MA, TO-92-3; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: -7mA; Zero Gate Voltage Drain Current Idss Max: -60mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: TO-92; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins; Operating Temperature Min: -55°C; Power Dissipation Pd: 350mW
The three parts on the right have similar specifications to J175-D26Z.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)SubcategoryBase Part NumberPower - MaxFET TypeFET TechnologyPower Dissipation-Max (Abs)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):MountNumber of PinsSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationPower DissipationBreakdown VoltageDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source ResistanceRadiation HardeningLead FreeView Compare
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J175-D26ZACTIVE (Last Updated: 1 day ago)6 WeeksThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO-55°C~150°C TJTape & Reel (TR)2015yesActive1 (Unlimited)FET General Purpose Small SignalJ175350mWP-ChannelJUNCTION0.35W7mA @ 15V3V @ 10nA30V125OhmROHS3 Compliant---------------------------------
-
----------------------3V @ 10nA30VTO-92-3-125 Ohm350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-P-Channel-7mA @ 15V------------------
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--Through HoleTO-226-3, TO-92-3 (TO-226AA)--55°C~150°C TJBulk--Obsolete1 (Unlimited)-J175350mWP-Channel--7mA @ 15V3V @ 10nA30V125OhmsRoHS Compliant--------------Through Hole3TO-92-3201mg150°C-55°C-30V350mW50mASingle350mW30V30V-60mA30V125OhmNoLead Free
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)2000-Obsolete1 (Unlimited)-J175350mWP-Channel--7mA @ 15V3V @ 10nA30V125Ohms-----------------TO-92-3---------------
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