J175-D26Z

ON Semiconductor J175-D26Z

Part Number:
J175-D26Z
Manufacturer:
ON Semiconductor
Ventron No:
8752894-J175-D26Z
Description:
J175-D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Ventron
ECAD Model:
Datasheet:
J175-D26Z

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Specifications
ON Semiconductor J175-D26Z technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor J175-D26Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    FET General Purpose Small Signal
  • Base Part Number
    J175
  • Power - Max
    350mW
  • FET Type
    P-Channel
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.35W
  • Current - Drain (Idss) @ Vds (Vgs=0)
    7mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    3V @ 10nA
  • Voltage - Breakdown (V(BR)GSS)
    30V
  • Resistance - RDS(On)
    125Ohm
  • RoHS Status
    ROHS3 Compliant
Description
The J175-D26Z is a P-channel JFET (Junction Field Effect Transistor) manufactured by ON Semiconductor. It is a low-power, low-noise device designed for use in a variety of applications. It has a maximum drain-source voltage of 30V and a maximum power dissipation of 0.35W. The J175-D26Z is packaged in a TO-92 package, which is a small, three-pin package that is commonly used for small signal transistors.

Features of the J175-D26Z include low noise, low power consumption, and high input impedance. It also has a low gate-source capacitance, which makes it suitable for use in high-frequency applications. The J175-D26Z is also designed to be highly reliable and has a long operating life.

Applications of the J175-D26Z include audio amplifiers, signal switching, and voltage regulation. It can also be used in power management circuits, such as DC-DC converters and battery chargers. Additionally, it can be used in RF circuits, such as mixers and oscillators.
J175-D26Z More Descriptions
Transistor, JFET, 30V, -60MA, TO-92-3; Breakdown Voltage Vbr:30V; Zero Gate Drain Current Idss Min:-7mA;
JFET P-Channel 30V 350mW Through Hole TO-92-3
Trans JFET P-CH 3-Pin TO-92 T/R
To-92 Jfet/Reel |Onsemi J175-D26Z
TRANSISTOR, JFET, 30V, -60MA, TO-92-3; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: -7mA; Zero Gate Voltage Drain Current Idss Max: -60mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: TO-92; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins; Operating Temperature Min: -55°C; Power Dissipation Pd: 350mW
Product Comparison
The three parts on the right have similar specifications to J175-D26Z.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Base Part Number
    Power - Max
    FET Type
    FET Technology
    Power Dissipation-Max (Abs)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Voltage - Cutoff (VGS off) @ Id:
    Voltage - Breakdown (V(BR)GSS):
    Supplier Device Package:
    Series:
    Resistance - RDS(On):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    FET Type:
    Drain to Source Voltage (Vdss):
    Current - Drain (Idss) @ Vds (Vgs=0):
    Mount
    Number of Pins
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Element Configuration
    Power Dissipation
    Breakdown Voltage
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Resistance
    Radiation Hardening
    Lead Free
    View Compare
  • J175-D26Z
    J175-D26Z
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    yes
    Active
    1 (Unlimited)
    FET General Purpose Small Signal
    J175
    350mW
    P-Channel
    JUNCTION
    0.35W
    7mA @ 15V
    3V @ 10nA
    30V
    125Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • J175
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3V @ 10nA
    30V
    TO-92-3
    -
    125 Ohm
    350mW
    Bulk
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C ~ 150°C (TJ)
    Through Hole
    -
    P-Channel
    -
    7mA @ 15V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • J175
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -55°C~150°C TJ
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    -
    J175
    350mW
    P-Channel
    -
    -
    7mA @ 15V
    3V @ 10nA
    30V
    125Ohms
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    3
    TO-92-3
    201mg
    150°C
    -55°C
    -30V
    350mW
    50mA
    Single
    350mW
    30V
    30V
    -60mA
    30V
    125Ohm
    No
    Lead Free
  • J175_D74Z
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    J175
    350mW
    P-Channel
    -
    -
    7mA @ 15V
    3V @ 10nA
    30V
    125Ohms
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-92-3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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