Diodes Incorporated ZXMN6A25GTA
- Part Number:
- ZXMN6A25GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478407-ZXMN6A25GTA
- Description:
- MOSFET N-CH 60V SOT223
- Datasheet:
- ZXMN6A25G
Diodes Incorporated ZXMN6A25GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A25GTA.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance50mOhm
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max2W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.9W
- Case ConnectionDRAIN
- Turn On Delay Time3.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1063pF @ 30V
- Current - Continuous Drain (Id) @ 25°C4.8A Ta
- Gate Charge (Qg) (Max) @ Vgs20.4nC @ 10V
- Rise Time4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10.6 ns
- Turn-Off Delay Time26.2 ns
- Continuous Drain Current (ID)6.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)28.5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN6A25GTA Overview
The maximum input capacitance of this device is 1063pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.7A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26.2 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A25GTA Features
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26.2 ns
based on its rated peak drain current 28.5A.
ZXMN6A25GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A25GTA applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1063pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.7A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26.2 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A25GTA Features
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26.2 ns
based on its rated peak drain current 28.5A.
ZXMN6A25GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A25GTA applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZXMN6A25GTA More Descriptions
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3
Trans MOSFET N-CH 60V 6.7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 6.7A SOT223 | Diodes Inc ZXMN6A25GTA
Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
Trans MOSFET N-CH 60V 6.7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 6.7A SOT223 | Diodes Inc ZXMN6A25GTA
Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
The three parts on the right have similar specifications to ZXMN6A25GTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishAdditional FeatureVoltage - Rated DCCurrent RatingElement ConfigurationSurface MountSubcategoryJESD-30 CodeQualification StatusDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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ZXMN6A25GTA17 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR9950mOhmMOSFET (Metal Oxide)DUALGULL WING2604041SINGLE WITH BUILT-IN DIODE12W TaENHANCEMENT MODE3.9WDRAIN3.8 nsN-ChannelSWITCHING50m Ω @ 3.6A, 10V1V @ 250μA1063pF @ 30V4.8A Ta20.4nC @ 10V4ns4.5V 10V±20V10.6 ns26.2 ns6.7A20V60V28.5A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------------
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17 Weeks-Surface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6EAR99250mOhmMOSFET (Metal Oxide)DUALGULL WING--61-11.1W TaENHANCEMENT MODE1.7W-3.4 nsN-ChannelSWITCHING250m Ω @ 3.2A, 10V4V @ 250μA405pF @ 50V1.5A Ta7.7nC @ 10V2.2ns6V 10V±20V2.2 ns8 ns3.5A20V100V-1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)HIGH RELIABILITY100V1.5ASingle--------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8EAR99-MOSFET (Metal Oxide)DUALGULL WING2604081SINGLE WITH BUILT-IN DIODE-1.56W TaENHANCEMENT MODE---N-ChannelSWITCHING25m Ω @ 12A, 10V1V @ 250μA1400pF @ 25V7.3A Ta26.8nC @ 10V-4.5V 10V±20V-----------ROHS3 Compliant-Matte Tin (Sn)LOW THRESHOLD---YESFET General Purpose PowerR-PDSO-G8Not Qualified30V9A0.025Ohm30V
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--Surface MountSurface MountSOT-23-3 Flat Leads----Tape & Reel (TR)---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------1.5W Ta----N-Channel--------------------RoHS Compliant----------450V---
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