ZXMN6A25GTA

Diodes Incorporated ZXMN6A25GTA

Part Number:
ZXMN6A25GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478407-ZXMN6A25GTA
Description:
MOSFET N-CH 60V SOT223
ECAD Model:
Datasheet:
ZXMN6A25G

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Specifications
Diodes Incorporated ZXMN6A25GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A25GTA.
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 3.6A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1063pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    20.4nC @ 10V
  • Rise Time
    4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10.6 ns
  • Turn-Off Delay Time
    26.2 ns
  • Continuous Drain Current (ID)
    6.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    28.5A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN6A25GTA Overview
The maximum input capacitance of this device is 1063pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.7A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26.2 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

ZXMN6A25GTA Features
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26.2 ns
based on its rated peak drain current 28.5A.


ZXMN6A25GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A25GTA applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZXMN6A25GTA More Descriptions
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3
Trans MOSFET N-CH 60V 6.7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 6.7A SOT223 | Diodes Inc ZXMN6A25GTA
Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
Product Comparison
The three parts on the right have similar specifications to ZXMN6A25GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Surface Mount
    Subcategory
    JESD-30 Code
    Qualification Status
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • ZXMN6A25GTA
    ZXMN6A25GTA
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    50mOhm
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    4
    1
    SINGLE WITH BUILT-IN DIODE
    1
    2W Ta
    ENHANCEMENT MODE
    3.9W
    DRAIN
    3.8 ns
    N-Channel
    SWITCHING
    50m Ω @ 3.6A, 10V
    1V @ 250μA
    1063pF @ 30V
    4.8A Ta
    20.4nC @ 10V
    4ns
    4.5V 10V
    ±20V
    10.6 ns
    26.2 ns
    6.7A
    20V
    60V
    28.5A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A08E6TA
    17 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    250mOhm
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    6
    1
    -
    1
    1.1W Ta
    ENHANCEMENT MODE
    1.7W
    -
    3.4 ns
    N-Channel
    SWITCHING
    250m Ω @ 3.2A, 10V
    4V @ 250μA
    405pF @ 50V
    1.5A Ta
    7.7nC @ 10V
    2.2ns
    6V 10V
    ±20V
    2.2 ns
    8 ns
    3.5A
    20V
    100V
    -
    1.3mm
    3.1mm
    1.8mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    HIGH RELIABILITY
    100V
    1.5A
    Single
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN3A02N8TC
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1.56W Ta
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    LOW THRESHOLD
    -
    -
    -
    YES
    FET General Purpose Power
    R-PDSO-G8
    Not Qualified
    30V
    9A
    0.025Ohm
    30V
  • ZXMN0545FFTA
    -
    -
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1.5W Ta
    -
    -
    -
    -
    N-Channel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    450V
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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