ZXMN6A09KTC

Diodes Incorporated ZXMN6A09KTC

Part Number:
ZXMN6A09KTC
Manufacturer:
Diodes Incorporated
Ventron No:
2488196-ZXMN6A09KTC
Description:
MOSFET N-CH 60V 11.2A DPAK
ECAD Model:
Datasheet:
ZXMN6A09KTC

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Comments
Specifications
Diodes Incorporated ZXMN6A09KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A09KTC.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    3.949996g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    40mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    11.2A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.15W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    10.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 7.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1426pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    7.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Rise Time
    4.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14.5 ns
  • Turn-Off Delay Time
    32.5 ns
  • Continuous Drain Current (ID)
    11.8A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7.9A
  • Drain to Source Breakdown Voltage
    60V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN6A09KTC Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1426pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

ZXMN6A09KTC Features
a continuous drain current (ID) of 11.8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 32.5 ns


ZXMN6A09KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A09KTC applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZXMN6A09KTC More Descriptions
N-Channel 60 V 0.04 Ohm Power MOSFET Surface Mount - TO-252-3
Transistor: N-MOSFET; unipolar; 60V; 9.6A; 0.04ohm; 10.1W; -55 150 deg.C; SMD; TO252(DPAK); AEC-Q100
Trans MOSFET N-CH 60V 11.8A 3-Pin(2 Tab) DPAK T/R
60V N-Ch Enhancement Mode MOSFET DPAK | Diodes Inc ZXMN6A09KTC
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
N-CH 60V 12A 40mOhm TO252-3 RoHSconf
Product Comparison
The three parts on the right have similar specifications to ZXMN6A09KTC.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Position
    Configuration
    Qualification Status
    Drain-source On Resistance-Max
    View Compare
  • ZXMN6A09KTC
    ZXMN6A09KTC
    13 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Discontinued
    1 (Unlimited)
    2
    EAR99
    40mOhm
    Matte Tin (Sn)
    LOW THRESHOLD
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    11.2A
    40
    3
    R-PSSO-G2
    1
    1
    2.15W Ta
    Single
    ENHANCEMENT MODE
    10.1W
    DRAIN
    4.8 ns
    N-Channel
    SWITCHING
    40m Ω @ 7.3A, 10V
    3V @ 250μA
    1426pF @ 30V
    7.7A Ta
    29nC @ 10V
    4.6ns
    4.5V 10V
    ±20V
    14.5 ns
    32.5 ns
    11.8A
    TO-252AA
    20V
    7.9A
    60V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • ZXMN0545G4TA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    50Ohm
    Matte Tin (Sn)
    -
    -
    450V
    MOSFET (Metal Oxide)
    GULL WING
    260
    140mA
    40
    4
    -
    1
    1
    2W Ta
    -
    ENHANCEMENT MODE
    2W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    50 Ω @ 100mA, 10V
    3V @ 1mA
    70pF @ 25V
    140mA Ta
    -
    7ns
    10V
    ±20V
    10 ns
    16 ns
    140mA
    -
    20V
    -
    450V
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    DUAL
    SINGLE WITH BUILT-IN DIODE
    -
    -
  • ZXMN10A08E6TA
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    250mOhm
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    100V
    MOSFET (Metal Oxide)
    GULL WING
    -
    1.5A
    -
    6
    -
    1
    1
    1.1W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    -
    3.4 ns
    N-Channel
    SWITCHING
    250m Ω @ 3.2A, 10V
    4V @ 250μA
    405pF @ 50V
    1.5A Ta
    7.7nC @ 10V
    2.2ns
    6V 10V
    ±20V
    2.2 ns
    8 ns
    3.5A
    -
    20V
    -
    100V
    1.3mm
    3.1mm
    1.8mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    DUAL
    -
    -
    -
  • ZXMN3A02N8TA
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    LOW THRESHOLD
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    260
    9A
    40
    8
    -
    1
    1
    1.56W Ta
    -
    ENHANCEMENT MODE
    2.5W
    -
    3.9 ns
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    5.5ns
    4.5V 10V
    ±20V
    5.5 ns
    35 ns
    9A
    -
    20V
    9A
    30V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    DUAL
    SINGLE WITH BUILT-IN DIODE
    Not Qualified
    0.025Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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