Diodes Incorporated ZXMN6A09KTC
- Part Number:
- ZXMN6A09KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488196-ZXMN6A09KTC
- Description:
- MOSFET N-CH 60V 11.2A DPAK
- Datasheet:
- ZXMN6A09KTC
Diodes Incorporated ZXMN6A09KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A09KTC.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance40mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating11.2A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.15W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation10.1W
- Case ConnectionDRAIN
- Turn On Delay Time4.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 7.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1426pF @ 30V
- Current - Continuous Drain (Id) @ 25°C7.7A Ta
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time4.6ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14.5 ns
- Turn-Off Delay Time32.5 ns
- Continuous Drain Current (ID)11.8A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.9A
- Drain to Source Breakdown Voltage60V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN6A09KTC Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1426pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
ZXMN6A09KTC Features
a continuous drain current (ID) of 11.8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 32.5 ns
ZXMN6A09KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A09KTC applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1426pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
ZXMN6A09KTC Features
a continuous drain current (ID) of 11.8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 32.5 ns
ZXMN6A09KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A09KTC applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZXMN6A09KTC More Descriptions
N-Channel 60 V 0.04 Ohm Power MOSFET Surface Mount - TO-252-3
Transistor: N-MOSFET; unipolar; 60V; 9.6A; 0.04ohm; 10.1W; -55 150 deg.C; SMD; TO252(DPAK); AEC-Q100
Trans MOSFET N-CH 60V 11.8A 3-Pin(2 Tab) DPAK T/R
60V N-Ch Enhancement Mode MOSFET DPAK | Diodes Inc ZXMN6A09KTC
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
N-CH 60V 12A 40mOhm TO252-3 RoHSconf
Transistor: N-MOSFET; unipolar; 60V; 9.6A; 0.04ohm; 10.1W; -55 150 deg.C; SMD; TO252(DPAK); AEC-Q100
Trans MOSFET N-CH 60V 11.8A 3-Pin(2 Tab) DPAK T/R
60V N-Ch Enhancement Mode MOSFET DPAK | Diodes Inc ZXMN6A09KTC
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
N-CH 60V 12A 40mOhm TO252-3 RoHSconf
The three parts on the right have similar specifications to ZXMN6A09KTC.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionConfigurationQualification StatusDrain-source On Resistance-MaxView Compare
-
ZXMN6A09KTC13 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noDiscontinued1 (Unlimited)2EAR9940mOhmMatte Tin (Sn)LOW THRESHOLDFET General Purpose Powers60VMOSFET (Metal Oxide)GULL WING26011.2A403R-PSSO-G2112.15W TaSingleENHANCEMENT MODE10.1WDRAIN4.8 nsN-ChannelSWITCHING40m Ω @ 7.3A, 10V3V @ 250μA1426pF @ 30V7.7A Ta29nC @ 10V4.6ns4.5V 10V±20V14.5 ns32.5 ns11.8ATO-252AA20V7.9A60V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-----
-
17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR9950OhmMatte Tin (Sn)--450VMOSFET (Metal Oxide)GULL WING260140mA404-112W Ta-ENHANCEMENT MODE2WDRAIN7 nsN-ChannelSWITCHING50 Ω @ 100mA, 10V3V @ 1mA70pF @ 25V140mA Ta-7ns10V±20V10 ns16 ns140mA-20V-450V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeDUALSINGLE WITH BUILT-IN DIODE--
-
17 WeeksSurface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6EAR99250mOhmMatte Tin (Sn)HIGH RELIABILITY-100VMOSFET (Metal Oxide)GULL WING-1.5A-6-111.1W TaSingleENHANCEMENT MODE1.7W-3.4 nsN-ChannelSWITCHING250m Ω @ 3.2A, 10V4V @ 250μA405pF @ 50V1.5A Ta7.7nC @ 10V2.2ns6V 10V±20V2.2 ns8 ns3.5A-20V-100V1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead FreeDUAL---
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)8EAR99-Matte Tin (Sn)LOW THRESHOLDFET General Purpose Power30VMOSFET (Metal Oxide)GULL WING2609A408-111.56W Ta-ENHANCEMENT MODE2.5W-3.9 nsN-ChannelSWITCHING25m Ω @ 12A, 10V1V @ 250μA1400pF @ 25V7.3A Ta26.8nC @ 10V5.5ns4.5V 10V±20V5.5 ns35 ns9A-20V9A30V-----ROHS3 Compliant-DUALSINGLE WITH BUILT-IN DIODENot Qualified0.025Ohm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to... -
27 December 2023
Everything You Need to Know About STM8S003F3P6TR Microcontroller
Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR... -
27 December 2023
Applications and Usage of IR2011STRPBF Isolated Gate Driver
Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.