ZXMN4A06GTA

Diodes Incorporated ZXMN4A06GTA

Part Number:
ZXMN4A06GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478289-ZXMN4A06GTA
Description:
MOSFET N-CH 40V 5A SOT223
ECAD Model:
Datasheet:
ZXMN4A06GTA

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Specifications
Diodes Incorporated ZXMN4A06GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN4A06GTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    75mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    40V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6.7A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    2.55 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    770pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18.2nC @ 10V
  • Rise Time
    4.45ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7.35 ns
  • Turn-Off Delay Time
    28.61 ns
  • Continuous Drain Current (ID)
    7A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    40V
  • Pulsed Drain Current-Max (IDM)
    22A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN4A06GTA Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 770pF @ 40V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.61 ns.A maximum pulsed drain current of 22A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

ZXMN4A06GTA Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28.61 ns
based on its rated peak drain current 22A.
a threshold voltage of 1V


ZXMN4A06GTA Applications
There are a lot of Diodes Incorporated
ZXMN4A06GTA applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZXMN4A06GTA More Descriptions
Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55 150 deg.C; SMD; SOT223
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 40V 7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 40V 7A SOT223 | Diodes Inc ZXMN4A06GTA
N Channel Mosfet, 40V, 7A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. ZXMN4A06GTA
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Product Comparison
The three parts on the right have similar specifications to ZXMN4A06GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-30 Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    Surface Mount
    Additional Feature
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • ZXMN4A06GTA
    ZXMN4A06GTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    75mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    40V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    6.7A
    40
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    2.55 ns
    N-Channel
    SWITCHING
    50m Ω @ 4.5A, 10V
    1V @ 250μA
    770pF @ 40V
    5A Ta
    18.2nC @ 10V
    4.45ns
    4.5V 10V
    ±20V
    7.35 ns
    28.61 ns
    7A
    1V
    20V
    5A
    40V
    22A
    150°C
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A11GTC
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    4
    EAR99
    -
    MATTE TIN
    -
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1A
    40
    -
    1
    -
    2W Ta
    -
    ENHANCEMENT MODE
    3.9W
    DRAIN
    -
    N-Channel
    SWITCHING
    350m Ω @ 2.6A, 10V
    4V @ 250μA
    274pF @ 50V
    1.7A Ta
    5.4nC @ 10V
    1.7ns
    6V 10V
    ±20V
    3.5 ns
    7.4 ns
    1.7A
    -
    20V
    1.9A
    100V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    R-PDSO-G4
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.6Ohm
    -
    -
    -
    -
  • ZXMN2A03E6TC
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    6
    1
    -
    1.1W Ta
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    55m Ω @ 7.2A, 4.5V
    700mV @ 250μA
    837pF @ 10V
    3.7A Ta
    8.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    3.7A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    R-PDSO-G6
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.055Ohm
    YES
    LOW THRESHOLD
    20V
    20V
  • ZXMN3A02N8TA
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    9A
    40
    8
    1
    1
    1.56W Ta
    -
    ENHANCEMENT MODE
    2.5W
    -
    3.9 ns
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    5.5ns
    4.5V 10V
    ±20V
    5.5 ns
    35 ns
    9A
    -
    20V
    9A
    30V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.025Ohm
    -
    LOW THRESHOLD
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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