Diodes Incorporated ZXMN4A06GTA
- Part Number:
- ZXMN4A06GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478289-ZXMN4A06GTA
- Description:
- MOSFET N-CH 40V 5A SOT223
- Datasheet:
- ZXMN4A06GTA
Diodes Incorporated ZXMN4A06GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN4A06GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance75mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC40V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating6.7A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time2.55 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds770pF @ 40V
- Current - Continuous Drain (Id) @ 25°C5A Ta
- Gate Charge (Qg) (Max) @ Vgs18.2nC @ 10V
- Rise Time4.45ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7.35 ns
- Turn-Off Delay Time28.61 ns
- Continuous Drain Current (ID)7A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)22A
- Max Junction Temperature (Tj)150°C
- Height1.8mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN4A06GTA Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 770pF @ 40V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.61 ns.A maximum pulsed drain current of 22A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
ZXMN4A06GTA Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28.61 ns
based on its rated peak drain current 22A.
a threshold voltage of 1V
ZXMN4A06GTA Applications
There are a lot of Diodes Incorporated
ZXMN4A06GTA applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 770pF @ 40V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28.61 ns.A maximum pulsed drain current of 22A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
ZXMN4A06GTA Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28.61 ns
based on its rated peak drain current 22A.
a threshold voltage of 1V
ZXMN4A06GTA Applications
There are a lot of Diodes Incorporated
ZXMN4A06GTA applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZXMN4A06GTA More Descriptions
Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55 150 deg.C; SMD; SOT223
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 40V 7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 40V 7A SOT223 | Diodes Inc ZXMN4A06GTA
N Channel Mosfet, 40V, 7A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. ZXMN4A06GTA
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 40V 7A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 40V 7A SOT223 | Diodes Inc ZXMN4A06GTA
N Channel Mosfet, 40V, 7A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. ZXMN4A06GTA
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
The three parts on the right have similar specifications to ZXMN4A06GTA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeQualification StatusConfigurationDrain-source On Resistance-MaxSurface MountAdditional FeatureDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
-
ZXMN4A06GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3noActive1 (Unlimited)4EAR9975mOhmMatte Tin (Sn)FET General Purpose Power40VMOSFET (Metal Oxide)DUALGULL WING2606.7A404112W TaSingleENHANCEMENT MODE2WDRAIN2.55 nsN-ChannelSWITCHING50m Ω @ 4.5A, 10V1V @ 250μA770pF @ 40V5A Ta18.2nC @ 10V4.45ns4.5V 10V±20V7.35 ns28.61 ns7A1V20V5A40V22A150°C1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
-
-Surface MountSurface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99-MATTE TIN-100VMOSFET (Metal Oxide)DUALGULL WING2601A40-1-2W Ta-ENHANCEMENT MODE3.9WDRAIN-N-ChannelSWITCHING350m Ω @ 2.6A, 10V4V @ 250μA274pF @ 50V1.7A Ta5.4nC @ 10V1.7ns6V 10V±20V3.5 ns7.4 ns1.7A-20V1.9A100V-------RoHS CompliantLead FreeR-PDSO-G4Not QualifiedSINGLE WITH BUILT-IN DIODE0.6Ohm----
-
--Surface MountSOT-23-6--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)6EAR99-Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260-3061-1.1W Ta-ENHANCEMENT MODE---N-ChannelSWITCHING55m Ω @ 7.2A, 4.5V700mV @ 250μA837pF @ 10V3.7A Ta8.2nC @ 4.5V-2.5V 4.5V±12V-----3.7A--------ROHS3 Compliant-R-PDSO-G6Not QualifiedSINGLE WITH BUILT-IN DIODE0.055OhmYESLOW THRESHOLD20V20V
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)8EAR99-Matte Tin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING2609A408111.56W Ta-ENHANCEMENT MODE2.5W-3.9 nsN-ChannelSWITCHING25m Ω @ 12A, 10V1V @ 250μA1400pF @ 25V7.3A Ta26.8nC @ 10V5.5ns4.5V 10V±20V5.5 ns35 ns9A-20V9A30V-------ROHS3 Compliant--Not QualifiedSINGLE WITH BUILT-IN DIODE0.025Ohm-LOW THRESHOLD--
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ.... -
25 September 2023
Get to Know the IRFB7545PBF Power MOSFET
Ⅰ. What is IRFB7545PBF?Ⅱ. Symbol and Footprint of IRFB7545PBFⅢ. Technical parametersⅣ. Features of IRFB7545PBFⅤ. Pinout and package of IRFB7545PBFⅥ. Application of IRFB7545PBFⅦ. How to use IRFB7545PBF?Ⅷ. How to... -
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ.... -
26 September 2023
W25Q128JVSIQ Footprint, Features and Package
Ⅰ. W25Q128JVSIQ descriptionⅡ. W25Q128JVSIQ symbol and footprintⅢ. Technical parametersⅣ. Features of W25Q128JVSIQⅤ. Pin configuration of W25Q128JVSIQⅥ. Package of W25Q128JVSIQⅦ. What are the characteristics of the SPI interface of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.