Diodes Incorporated ZXM62P02E6TA
- Part Number:
- ZXM62P02E6TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478686-ZXM62P02E6TA
- Description:
- MOSFET P-CH 20V 2.3A SOT23-6
- Datasheet:
- ZXM62P02E6TA
Diodes Incorporated ZXM62P02E6TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM62P02E6TA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Weight14.996898mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance200mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.6A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.7W
- Turn On Delay Time4.1 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds320pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.3A Ta
- Gate Charge (Qg) (Max) @ Vgs5.8nC @ 4.5V
- Rise Time15.4ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)15.4 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)2.3A
- Gate to Source Voltage (Vgs)12V
- Height1.3mm
- Length3.1mm
- Width1.8mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXM62P02E6TA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 320pF @ 15V.This device conducts a continuous drain current (ID) of 2.3A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.7V 4.5V volts (2.7V 4.5V).
ZXM62P02E6TA Features
a continuous drain current (ID) of 2.3A
the turn-off delay time is 12 ns
a 20V drain to source voltage (Vdss)
ZXM62P02E6TA Applications
There are a lot of Diodes Incorporated
ZXM62P02E6TA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 320pF @ 15V.This device conducts a continuous drain current (ID) of 2.3A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.7V 4.5V volts (2.7V 4.5V).
ZXM62P02E6TA Features
a continuous drain current (ID) of 2.3A
the turn-off delay time is 12 ns
a 20V drain to source voltage (Vdss)
ZXM62P02E6TA Applications
There are a lot of Diodes Incorporated
ZXM62P02E6TA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZXM62P02E6TA More Descriptions
ZXM62P02E6 20 V 0.2 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23-6
Trans MOSFET P-CH 20V 2.3A Automotive 6-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 2.3A, Sot-26 Rohs Compliant: Yes |Diodes Inc. ZXM62P02E6TA
Trans MOSFET P-CH 20V 2.3A Automotive 6-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 2.3A, Sot-26 Rohs Compliant: Yes |Diodes Inc. ZXM62P02E6TA
The three parts on the right have similar specifications to ZXM62P02E6TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationDrain to Source Breakdown VoltageDual Supply VoltageNominal VgsQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxMax Operating TemperatureMin Operating TemperatureMax Power DissipationJESD-30 CodeConfigurationView Compare
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ZXM62P02E6TA17 WeeksSurface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)6EAR99200mOhmMatte Tin (Sn)LOW THRESHOLDOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING260-1.6A406111.1W TaSingleENHANCEMENT MODE1.7W4.1 nsP-ChannelSWITCHING200m Ω @ 1.6A, 4.5V700mV @ 250μA320pF @ 15V2.3A Ta5.8nC @ 4.5V15.4ns20V2.7V 4.5V±12V15.4 ns12 ns2.3A12V1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead Free--------------
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99220mOhm-LOW THRESHOLDFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING2601.2A40311625mW TaSingleENHANCEMENT MODE806mW1.9 nsN-ChannelSWITCHING220m Ω @ 910mA, 10V1V @ 250μA150pF @ 25V1.4A Ta4.1nC @ 10V2.5ns-4.5V 10V±20V2.5 ns5.8 ns1.4A20V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMT30V30V1 V--------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012-noObsolete1 (Unlimited)3EAR99---Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-800mANOT SPECIFIED311625mW TaSingleENHANCEMENT MODE625mW2.9 nsP-ChannelSWITCHING600m Ω @ 610mA, 4.5V1.5V @ 250μA150pF @ 15V900mA Ta3.5nC @ 4.5V6.7ns20V2.7V 4.5V±12V6.7 ns11.2 ns900mA12V---No SVHC-RoHS CompliantLead Free---20V--Not Qualified0.9A0.6Ohm-----
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-Surface MountSurface MountSOT-23-6-14.996898mg--Digi-Reel®-e3-Obsolete1 (Unlimited)6EAR99-Matte Tin (Sn)LOW THRESHOLD-30VMOSFET (Metal Oxide)DUALGULL WING2603.2A30611--ENHANCEMENT MODE1.1W2.9 nsN-ChannelSWITCHING110m Ω @ 2.2A, 10V1V @ 250μA380pF @ 25V3.2A Ta9.6nC @ 10V5.6ns---5.6 ns11.7 ns3.2A20V-----ROHS3 CompliantContains Lead--30V--Not Qualified--150°C-55°C1.1WR-PDSO-G6SINGLE WITH BUILT-IN DIODE
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